This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance and nearby contact effects. Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor and inductive-based communication system and bandpass filtering.
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Vendeur : Brook Bookstore On Demand, Napoli, NA, Italie
Etat : new. Questo è un articolo print on demand. N° de réf. du vendeur 3c182ea88de87c88413822e5ea3bb718
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Vendeur : Ria Christie Collections, Uxbridge, Royaume-Uni
Etat : New. In. N° de réf. du vendeur ria9783319076102_new
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Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Buch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance and nearby contact effects. Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor and inductive-based communication system and bandpass filtering. 192 pp. Englisch. N° de réf. du vendeur 9783319076102
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Vendeur : moluna, Greven, Allemagne
Gebunden. Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Introduces a robust model that captures accurately all the loss modes of a TSV, coupling parasitics between TSVs and the TSV nonlinear capacitance and resistance of the depletion region Enables readers to use a model which is technology dependent . N° de réf. du vendeur 4497932
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Vendeur : Books Puddle, New York, NY, Etats-Unis
Etat : New. pp. 108. N° de réf. du vendeur 26356444251
Quantité disponible : 4 disponible(s)
Vendeur : Majestic Books, Hounslow, Royaume-Uni
Etat : New. Print on Demand pp. 108. N° de réf. du vendeur 357128068
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Vendeur : Biblios, Frankfurt am main, HESSE, Allemagne
Etat : New. PRINT ON DEMAND pp. 108. N° de réf. du vendeur 18356444241
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Vendeur : Revaluation Books, Exeter, Royaume-Uni
Hardcover. Etat : Brand New. 2015 edition. 179 pages. 9.25x6.25x0.50 inches. In Stock. N° de réf. du vendeur x-3319076108
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Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Buch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance and nearby contact effects. Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductorand inductive-based communication system and bandpass filtering.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 192 pp. Englisch. N° de réf. du vendeur 9783319076102
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Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Buch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance and nearby contact effects. Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor and inductive-based communication system and bandpass filtering. N° de réf. du vendeur 9783319076102
Quantité disponible : 1 disponible(s)