Power GaN Devices: Materials, Applications and Reliability - Couverture souple
Livre 90 sur 153: Power Systems
Synopsis
1 Properties and advantages of gallium nitride; Daisuke Ueda.
2 Substrate issues and epitaxial growth; Stacia Keller.
3 GaN-on-Silicon CMOS compatible process; Denis Marcon.
4 Lateral GaN-based power devices; Umesh Mishra.
5 GaN-based vertical transistors; Srabanti Chowduri.
6 GaN-based nanowire transistors; Tomas Palacios.
7 Deep level characterization: electrical and optical methods; Robert Kaplar.
8 Modeling of GaN HEMTs: from device-level simulation to virtual prototyping; Gilberto Curatola, Giovanni Verzellesi.
9 Performance-limiting defects in GaN-based HEMTs: from surface states to common impurities; Bisi, Rossetto, De Santi, Meneghini, Meneghesso, Zanoni.<
10 Cascode configuration for normally-off devices; Primit Parikh.
11 Gate injection transistors: E-mode operation and conductivity modulation; Tetsuso Ueda.
12 Fluorine implanted E-mode transistors; Kevin Chen.
13 Drift effects in GaN HV power transistors; Joachim Wuerfl.
14 Reliability Aspects of 650V rated GaN Power Devices; P. Moens, A. Banerjee.
15 Switching Characteristics of Gallium-Nitride Transistors: system level issues; Fred Lee, Qiang Li, Xiucheng Huang and Zhengyang Liu.
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
