Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion - Couverture rigide

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9783319779935: Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

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ISBN 10 : 3319779931 ISBN 13 : 9783319779935

Editeur : Springer International Publishing AG, 2018

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Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the device level to circuit level, both for drivers and power conversions architectures

Demonstrates how GaN may be a superior technology for switching devices, enabling both high frequency and high efficiency power conversion

Enables design of smaller and more efficient power supplies

Les informations fournies dans la section � Synopsis � peuvent faire r�f�rence � une autre �dition de ce titre.

� propos de l'auteur

Gaudenzio Meneghesso is full professor at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices.

Matteo Meneghini is researcher at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices.

Enrico Zanoni is full professor at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices.

Les informations fournies dans la section � A propos du livre � peuvent faire r�f�rence � une autre �dition de ce titre.

�diteur: Springer International Publishing AG
Date d'�dition: 2018
Langue: anglais
ISBN 10: 3319779931
ISBN 13: 9783319779935
Reliure: Reli�
Num�ro d'�dition: 1
Nombre de pages: 245
�diteur: Meneghesso Gaudenzio, Meneghini Matteo, Zanoni Enrico
Coordonn�es du fabricant: Springer Nature Customer Service Center GmbH
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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion (eng)

Meneghesso, Gaudenzio

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ISBN 10 : 3319779931 ISBN 13 : 9783319779935

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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion (Integrated Circuits and Systems)

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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Meneghesso, Gaudenzio|Meneghini, Matteo|Zanoni, Enrico

Edit� par Springer International Publishing, 2018

ISBN 10 : 3319779931 ISBN 13 : 9783319779935

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Gebunden. Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiersDemonstrates how GaN is a superior technology for sw. N� de r�f. du vendeur 221458735

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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Gaudenzio Meneghesso

Edit� par Springer International Publishing, Springer Nature Switzerland Mai 2018, 2018

ISBN 10 : 3319779931 ISBN 13 : 9783319779935

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Buch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;Enables design of smaller, cheaper and more efficient power supplies. 248 pp. Englisch. N� de r�f. du vendeur 9783319779935

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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Gaudenzio Meneghesso

Edit� par Springer, 2018

ISBN 10 : 3319779931 ISBN 13 : 9783319779935

Neuf Couverture rigide

Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne

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Buch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;Enables design of smaller, cheaper and more efficient power supplies. N� de r�f. du vendeur 9783319779935

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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion (Integrated Circuits and Systems)

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ISBN 10 : 3319779931 ISBN 13 : 9783319779935

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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Gaudenzio Meneghesso

Edit� par Birkh�user, Springer Mai 2018, 2018

ISBN 10 : 3319779931 ISBN 13 : 9783319779935

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Buch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the device level to circuit level, both for drivers and power conversions architecturesDemonstrates how GaN may be a superior technology for switching devices, enabling both high frequency and high efficiency power conversionEnables design of smaller and more efficient power suppliesSpringer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 248 pp. Englisch. N� de r�f. du vendeur 9783319779935

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