Materials Science & Technology: A Comprehensive Treatment, Electronic Structure & Properties of Semiconductors - Couverture souple

Couverture souple

ISBN 10 : 3527268170 ISBN 13 : 9783527268177

Editeur : Wiley-VCH Verlag GmbH, 1991

Synopsis

This handbook, number four in an extended treatment of materials science and technology, is specifically concerned with the electron structure and the properties of semiconductors. The book is illustrated and offers considerable tabulated information.

A propos du livre

Quatrième de couverture

Materials Science and Technology A Comprehensive Treatment Edited by R.W. Cahn, P. Haasen, E.J. Kramer The 18–volume series ‘Materials Science and Technology’ is the first in–depth, topic–oriented reference work devoted to this growing interdisciplinary field. A compendium of current, state–of–the–art information, it covers the most important classes of materials: metals, ceramics, glasses, polymers, semiconductors, and composites, from the fundamentals of perfect semiconductors via the physics of defects, to "artifical" and amorphous semiconductors. Edited by internationally renowned figures in materials science, this series is sure to establish itself as a seminal work. Volume 4: This volume spans the field of semiconductor physics, with particular emphasis on concepts relevant to semiconductor technology. Topics included are: band theory applied to semiconductors optical properties and charge transport intrinsic point defects in semiconductors deep centers in semiconductors equilibria, nonequilibria, diffusion, and precipitation dislocations grain boundaries in semiconductors interfaces the hall effect in quantum wires material properties of hydrogenated amorphous silicon high–temperature properties of three–dimensional transition elements in silicon.

Présentation de l'éditeur

This volume spans the field of semiconductor physics, with particular emphasis on concepts relevant to semiconductor technology.

From the Contents:
Lannoo: Band Theory Applied to Semiconductors. Ulbrich: Optical Properties and Charge Transport. Watkins: Intrinsic Point Defects in Semiconductors. Feichtinger: Deep Centers in Semiconductors. Gösele/Tan: Equilibria, Nonequilibria, Diffusion, and Precipitation. Alexander/Teichler: Dislocations. Thibault/Rouvière/Bourret: Grain Boundaries in Semiconductors. Ourmazd/Hull/Tung: Interfaces. Chang: The Hall Effect in Quantum Wires. Street/Winer: Material Properties of Hydrogenated Amorphous Silicon. Schröter/Seibt/Gilles: High–Temperature Properties of 3d Transition Elements in Silicon.

Détails de l'édition

• Éditeur: Wiley-VCH Verlag GmbH
• Date d'édition: 1991
• Langue: anglais
• ISBN 10: 3527268170
• ISBN 13: 9783527268177
• Reliure: Broché
• Numéro d'édition: 4
• Nombre de pages: 512
• Éditeur: Schroter W., Cahn R. W., Etc., Haasen P., Kramer E.J.
• Coordonnées du fabricant: non disponible
• Personne responsable: non disponible