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Physics of Narrow Gap Semiconductors: Proceedings of the 4th International Conference on Physics of Narrow Gap Semiconductors Held at Linz, Austria, September 14-17, 1981 (Lecture Notes in Physics) - Couverture souple
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Physics of Narrow Gap Semiconductors : Proceedings of the 4th International Conference on Physics of Narrow Gap Semiconductors Held at Linz, Austria, September 14¿17, 1981
Edité par
Springer Berlin Heidelberg, 1982
ISBN 10 : 3540111913
ISBN 13 : 9783540111917
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Couverture souple
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Etat : Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher. N° de réf. du vendeur 24969319/202
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Physics of Narrow Gap Semiconductors. Proceedings of the 4th International Conference on Physics of Narrow Gap Semiconductors Held at Linz, Austria, September 14-17,1981.
Edité par
Berlin, Springer Berlin Heidelberg, 1982
ISBN 10 : 3540111913
ISBN 13 : 9783540111917
Ancien ou d'occasion
Softcover
Vendeur : Antiquariat Bookfarm, Löbnitz, Allemagne
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Softcover. 408 S. Ehem. Bibliotheksexemplar mit Signatur und Stempel. GUTER Zustand, ein paar Gebrauchsspuren. Ex-library with stamp and library-signature. GOOD condition, some traces of use. 3540111913 Sprache: Englisch Gewicht in Gramm: 550. N° de réf. du vendeur 2341507
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Physics of Narrow Gap Semiconductors. Proceedings of the 4th International Conference on Physics of Narrow Gap Semiconductors Held at Linz, Austria, September 14-17,1981.
Edité par
Berlin, Springer, 1982
ISBN 10 : 3540111913
ISBN 13 : 9783540111917
Ancien ou d'occasion
Softcover
Vendeur : Antiquariat Bookfarm, Löbnitz, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Softcover. Ex-library with stamp and library-signature. GOOD condition, some traces of use. Ehem. Bibliotheksexemplar mit Signatur und Stempel. GUTER Zustand, ein paar Gebrauchsspuren. C-05893 3540111913 Sprache: Englisch Gewicht in Gramm: 1150. N° de réf. du vendeur 2492159
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Physics of Narrow Gap Semiconductors : Proceedings of the 4th International Conference on Physics of Narrow Gap Semiconductors
Edité par
Springer-Verlag, Berlin / Heidelberg, 1982
ISBN 10 : 3540111913
ISBN 13 : 9783540111917
Ancien ou d'occasion
orig. wrappers
Vendeur : Expatriate Bookshop of Denmark, Svendborg, Danemark
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orig. wrappers. Etat : Minor wear. VG. 24x16cm, xi,485 pp, Weighs 900 grams. Series: Lecture Notes in Physics, 152. Full title reads: "Physics of Narrow Gap Semiconductors : Proceedings of the 4th International Conference on Physics of Narrow Gap Semiconductors, held at Linz, Austria, September 14-17, 1981". N° de réf. du vendeur 027492
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Physics of Narrow Gap Semiconductors
Edité par
Springer Berlin Heidelberg Feb 1982, 1982
ISBN 10 : 3540111913
ISBN 13 : 9783540111917
Neuf
Taschenbuch
Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -InhaltsangabeNarrow gap semiconductors - the state op the art.- Growth of some important narrow gap semiconductors.- Electrical transport and magnetic properties of MAs3 (M = Ca,Sr,Eu,Ba), - and -EuP3 and their alloys.- Tm1 xEuxSe: New narrow gap magnetic semiconductors.- Electronic properties of KxRb1 xAu, an indirect small gap semiconductor.- Growth of Sb2Te3 single crystals by hot-wall-epitaxy.- THM growth of PbTe.- Misfit strain in epitaxial IV-VI semiconductor films.- Structure defects in Pb 1-xSnxTe solid solution heterocompositions.- Influence of impurity doping on the electrical properties of LPE grown Pb1 xSnxTe and PbSeyTe1 y.- Plasma reflection spectrum of the Pb 1 xSnxTe inhomogeneous layers and vapour transport process of Pb 1 xSnxTe.- Molecular beam epitaxy of CdTe and CdxHg1 xTe.- The investigation of the second phase in Hg1 xCdxTe crystals.- Structural and electrical properties of as grown CdxHg1 xTe epitaxial layers deposited by cathodic sputtering.- Interfacial energy bands for narrow-gap semiconductors.- 2D-subbands in III-V and narrow-gap semiconductors.- Giant nonlinearities, optical bistability and the optical transistor in narrow-gap semiconductors.- Pulse width dependent nonlinear absorption in small gap semiconductors.- Photo-hall measurements of high-density photoexcited electrons in Hg1 x CdxTe.- The photoluminescence study of CdxHg1 xTe alloys.- Plasmon-assisted recombination in narrow-gap semiconductors in a magnetic field.- Calculation of the Auger lifetime in degenerate n-type (Hg,Cd)Te.- Excess carrier lifetime in Hg1 xCdxTe by population modulation spectroscopy.- Laser threshold and recombination in Pb1 xSnxTe AND PbS1 xSex.- Optical studies of a high density electron-hole plasma iN PbTe.- Far infrared optical properties of Cd3P2 AND Cd3As2.- A new broadband near-millimeter wave detector using mercury-cadmium-telluride.- Non-linear magneto-optics in InSb pumped by A c.w. CO LASER.- Far-infrared studies of the bound and free carriers in n-InSb as a function of hydrostatic pressure.- High resolution magneto-optical studies of free and bound hole excitations in InSb.- Two-photon spectroscopy in InSb with cw CO2 Lasers.- Uniaxial-stress-enhanced electron spin resonance in InSb.- Optical four-wave mixing in pbte epitaxial layers.- Spin-flip resonances in cadmium arsenide.- Peculiarities of the band structure of HgSe and mixed crystals Hg1 xCdxSe from the interband magnet absorption.- Bandstructure of Pb1 xGexTe in the C3v - Phase.- Band structure of cubic and rhombohedral GeTe.- Dielectric properties of (Pb,Sn,Ge)Te-influences of defects.- Phase transitions and optical properties of IV-VI compounds.- Lattice dynamics and phase transitions in IV-VI compounds.- Pseudopotential approach to total energy calculations in narrow GAP semiconductors.- Lattice dynamics and phase transitions in IV-VI semiconducting compounds.- Composition and carrier concentration dependence of structural instabilities in PbTe-SnTe alloys.- Phonon and electrical resistivity anomalies at the displacive phase transition in Pb 1 XSnXTe and Pb 1 XGeXTe.- Coupled phase transitions in Pb1 xGexTe.- A neutron scattering study of lattice dynamics of HgTe and HgSe.- New aspects of the material and device technology of intrinsic infrared photodetectors.- HgCdTe liquid phase epitaxial growth technology.- Lattice-matched PbSnTe/PbTeSe heterostructure device technology.- Lead chalcogenide diode lasers: State of the art and applications.- Magnetic properties of semimagnetic semiconductors.- Magnetization of narrow gap semimagnetic semiconductors Hg1 xMnxTe AND Hg1 xMnxSe.- Microwave and far infrared magnetotransmission studies in Hg1 xMnxSe.- Acceptor states in semimagnetic semiconductors in a magnetic field.- Magneto-optical studies of quaternary semimagnetic semiconductor alloys Hg1 x yCdxMnyTe.- Infrared magnetoabsorption in zero gap Hg1 xFexTe and Hg1 xFexSe mixed cryst. N° de réf. du vendeur 9783540111917
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Physics of Narrow Gap Semiconductors
Edité par
Springer Berlin Heidelberg, 1982
ISBN 10 : 3540111913
ISBN 13 : 9783540111917
Neuf
Couverture souple
Vendeur : moluna, Greven, Allemagne
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Etat : New. N° de réf. du vendeur 4881289
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Physics of Narrow Gap Semiconductors: Proceedings of the 4th International Conference on Physics of Narrow Gap Semiconductors Held at Linz, Austria, ... 14-17, 1981 (Lecture Notes in Physics, 152)
Vendeur : Ria Christie Collections, Uxbridge, Royaume-Uni
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Etat : New. In. N° de réf. du vendeur ria9783540111917_new
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Physics of Narrow Gap Semiconductors : Proceedings of the 4th International Conference on Physics of Narrow Gap Semiconductors Held at Linz, Austria, September 14¿17, 1981
Edité par
Springer Berlin Heidelberg, 1982
ISBN 10 : 3540111913
ISBN 13 : 9783540111917
Neuf
Taschenbuch
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - InhaltsangabeNarrow gap semiconductors - the state op the art.- Growth of some important narrow gap semiconductors.- Electrical transport and magnetic properties of MAs3 (M = Ca,Sr,Eu,Ba), - and -EuP3 and their alloys.- Tm1 xEuxSe: New narrow gap magnetic semiconductors.- Electronic properties of KxRb1 xAu, an indirect small gap semiconductor.- Growth of Sb2Te3 single crystals by hot-wall-epitaxy.- THM growth of PbTe.- Misfit strain in epitaxial IV-VI semiconductor films.- Structure defects in Pb 1-xSnxTe solid solution heterocompositions.- Influence of impurity doping on the electrical properties of LPE grown Pb1 xSnxTe and PbSeyTe1 y.- Plasma reflection spectrum of the Pb 1 xSnxTe inhomogeneous layers and vapour transport process of Pb 1 xSnxTe.- Molecular beam epitaxy of CdTe and CdxHg1 xTe.- The investigation of the second phase in Hg1 xCdxTe crystals.- Structural and electrical properties of as grown CdxHg1 xTe epitaxial layers deposited by cathodic sputtering.- Interfacial energy bands for narrow-gap semiconductors.- 2D-subbands in III-V and narrow-gap semiconductors.- Giant nonlinearities, optical bistability and the optical transistor in narrow-gap semiconductors.- Pulse width dependent nonlinear absorption in small gap semiconductors.- Photo-hall measurements of high-density photoexcited electrons in Hg1 x CdxTe.- The photoluminescence study of CdxHg1 xTe alloys.- Plasmon-assisted recombination in narrow-gap semiconductors in a magnetic field.- Calculation of the Auger lifetime in degenerate n-type (Hg,Cd)Te.- Excess carrier lifetime in Hg1 xCdxTe by population modulation spectroscopy.- Laser threshold and recombination in Pb1 xSnxTe AND PbS1 xSex.- Optical studies of a high density electron-hole plasma iN PbTe.- Far infrared optical properties of Cd3P2 AND Cd3As2.- A new broadband near-millimeter wave detector using mercury-cadmium-telluride.- Non-linear magneto-optics in InSb pumped by A c.w. CO LASER.- Far-infrared studies of the bound and free carriers in n-InSb as a function of hydrostatic pressure.- High resolution magneto-optical studies of free and bound hole excitations in InSb.- Two-photon spectroscopy in InSb with cw CO2 Lasers.- Uniaxial-stress-enhanced electron spin resonance in InSb.- Optical four-wave mixing in pbte epitaxial layers.- Spin-flip resonances in cadmium arsenide.- Peculiarities of the band structure of HgSe and mixed crystals Hg1 xCdxSe from the interband magnet absorption.- Bandstructure of Pb1 xGexTe in the C3v - Phase.- Band structure of cubic and rhombohedral GeTe.- Dielectric properties of (Pb,Sn,Ge)Te-influences of defects.- Phase transitions and optical properties of IV-VI compounds.- Lattice dynamics and phase transitions in IV-VI compounds.- Pseudopotential approach to total energy calculations in narrow GAP semiconductors.- Lattice dynamics and phase transitions in IV-VI semiconducting compounds.- Composition and carrier concentration dependence of structural instabilities in PbTe-SnTe alloys.- Phonon and electrical resistivity anomalies at the displacive phase transition in Pb 1 XSnXTe and Pb 1 XGeXTe.- Coupled phase transitions in Pb1 xGexTe.- A neutron scattering study of lattice dynamics of HgTe and HgSe.- New aspects of the material and device technology of intrinsic infrared photodetectors.- HgCdTe liquid phase epitaxial growth technology.- Lattice-matched PbSnTe/PbTeSe heterostructure device technology.- Lead chalcogenide diode lasers: State of the art and applications.- Magnetic properties of semimagnetic semiconductors.- Magnetization of narrow gap semimagnetic semiconductors Hg1 xMnxTe AND Hg1 xMnxSe.- Microwave and far infrared magnetotransmission studies in Hg1 xMnxSe.- Acceptor states in semimagnetic semiconductors in a magnetic field.- Magneto-optical studies of quaternary semimagnetic semiconductor alloys Hg1 x yCdxMnyTe.- Infrared magnetoabsorption in zero gap Hg1 xFexTe and Hg1 xFexSe mixed crystals.- The quantu. N° de réf. du vendeur 9783540111917
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Physics of Narrow Gap Semiconductors
Edité par
Springer Berlin Heidelberg, Springer Berlin Heidelberg Feb 1982, 1982
ISBN 10 : 3540111913
ISBN 13 : 9783540111917
Neuf
Taschenbuch
Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -InhaltsangabeNarrow gap semiconductors - the state op the art.- Growth of some important narrow gap semiconductors.- Electrical transport and magnetic properties of MAs3 (M = Ca,Sr,Eu,Ba), - and -EuP3 and their alloys.- Tm1 xEuxSe: New narrow gap magnetic semiconductors.- Electronic properties of KxRb1 xAu, an indirect small gap semiconductor.- Growth of Sb2Te3 single crystals by hot-wall-epitaxy.- THM growth of PbTe.- Misfit strain in epitaxial IV-VI semiconductor films.- Structure defects in Pb 1-xSnxTe solid solution heterocompositions.- Influence of impurity doping on the electrical properties of LPE grown Pb1 xSnxTe and PbSeyTe1 y.- Plasma reflection spectrum of the Pb 1 xSnxTe inhomogeneous layers and vapour transport process of Pb 1 xSnxTe.- Molecular beam epitaxy of CdTe and CdxHg1 xTe.- The investigation of the second phase in Hg1 xCdxTe crystals.- Structural and electrical properties of as grown CdxHg1 xTe epitaxial layers deposited by cathodic sputtering.- Interfacial energy bands for narrow-gap semiconductors.- 2D-subbands in III-V and narrow-gap semiconductors.- Giant nonlinearities, optical bistability and the optical transistor in narrow-gap semiconductors.- Pulse width dependent nonlinear absorption in small gap semiconductors.- Photo-hall measurements of high-density photoexcited electrons in Hg1 x CdxTe.- The photoluminescence study of CdxHg1 xTe alloys.- Plasmon-assisted recombination in narrow-gap semiconductors in a magnetic field.- Calculation of the Auger lifetime in degenerate n-type (Hg,Cd)Te.- Excess carrier lifetime in Hg1 xCdxTe by population modulation spectroscopy.- Laser threshold and recombination in Pb1 xSnxTe AND PbS1 xSex.- Optical studies of a high density electron-hole plasma iN PbTe.- Far infrared optical properties of Cd3P2 AND Cd3As2.- A new broadband near-millimeter wave detector using mercury-cadmium-telluride.- Non-linear magneto-optics in InSb pumped by A c.w. CO LASER.- Far-infrared studies of the bound and free carriers in n-InSb as a function of hydrostatic pressure.- High resolution magneto-optical studies of free and bound hole excitations in InSb.- Two-photon spectroscopy in InSb with cw CO2 Lasers.- Uniaxial-stress-enhanced electron spin resonance in InSb.- Optical four-wave mixing in pbte epitaxial layers.- Spin-flip resonances in cadmium arsenide.- Peculiarities of the band structure of HgSe and mixed crystals Hg1 xCdxSe from the interband magnet absorption.- Bandstructure of Pb1 xGexTe in the C3v - Phase.- Band structure of cubic and rhombohedral GeTe.- Dielectric properties of (Pb,Sn,Ge)Te-influences of defects.- Phase transitions and optical properties of IV-VI compounds.- Lattice dynamics and phase transitions in IV-VI compounds.- Pseudopotential approach to total energy calculations in narrow GAP semiconductors.- Lattice dynamics and phase transitions in IV-VI semiconducting compounds.- Composition and carrier concentration dependence of structural instabilities in PbTe-SnTe alloys.- Phonon and electrical resistivity anomalies at the displacive phase transition in Pb 1 XSnXTe and Pb 1 XGeXTe.- Coupled phase transitions in Pb1 xGexTe.- A neutron scattering study of lattice dynamics of HgTe and HgSe.- New aspects of the material and device technology of intrinsic infrared photodetectors.- HgCdTe liquid phase epitaxial growth technology.- Lattice-matched PbSnTe/PbTeSe heterostructure device technology.- Lead chalcogenide diode lasers: State of the art and applications.- Magnetic properties of semimagnetic semiconductors.- Magnetization of narrow gap semimagnetic semiconductors Hg1 xMnxTe AND Hg1 xMnxSe.- Microwave and far infrared magnetotransmission studies in Hg1 xMnxSe.- Acceptor states in semimagnetic semiconductors in a magnetic field.- Magneto-optical studies of quaternary semimagnetic semiconductor alloys Hg1 x yCdxMnyTe.- Infrared magnetoabsorption in zero gap Hg1 xFexTe and Hg1 xFexSe mixed crystals. N° de réf. du vendeur 9783540111917
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Physics of Narrow Gap Semiconductors
Vendeur : Books Puddle, New York, NY, Etats-Unis
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Etat : New. pp. 508. N° de réf. du vendeur 26358904059
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