Application of High Magnetic Fields in Semiconductor Physics: Proceedings Of The International Conference, Held In Grenoble, France, September 13-17, 1982 (Lecture Notes In Physics) - Couverture souple
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Application of high magnetic fields in semiconductor physics. Proceedings of the international conference held in Grenoble France September 13 - 17 1982.
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Berlin, Springer, 1983
ISBN 10 : 3540119965
ISBN 13 : 9783540119968
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Application of High Magnetic Fields in Semiconductor Physics. Proceeding of the International Conference Held in Grenoble, France, September 13-17, 1982.
Edité par
Berlin, Springer Berlin Heidelberg, 1983
ISBN 10 : 3540119965
ISBN 13 : 9783540119968
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Softcover
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Softcover. 557 S. Ehem. Bibliotheksexemplar mit Signatur und Stempel. GUTER Zustand, ein paar Gebrauchsspuren. Ex-library with stamp and library-signature. GOOD condition, some traces of use. 3540119965 Sprache: Englisch Gewicht in Gramm: 550. N° de réf. du vendeur 2341002
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Application of high magnetic fields in semiconductor physics : proceedings of the internat. conference, held in Grenoble, France, September 13 - 17, 1982. ed. by G. Landwehr / Lecture notes in physics ; Vol. 177
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Berlin ; Heidelberg ; New York ; Tokyo : Springer, 1983
ISBN 10 : 3540119965
ISBN 13 : 9783540119968
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Okt. XII, 552 S. : Ill., graph. Darst. ; 25 cm Sprache: Englisch Gewicht in Gramm: 500. N° de réf. du vendeur 99891
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Application of High Magnetic Fields in Semiconductor Physics: Proceedings of the International Conference Held in Grenoble, France, September 13-17, 1982 (Lecture Notes in Physics, 177)
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Application of High Magnetic Fields in Semiconductor Physics
Edité par
Springer, Springer Berlin Heidelberg Mär 1983, 1983
ISBN 10 : 3540119965
ISBN 13 : 9783540119968
Neuf
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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Precision determination of h/e2 and the fine-structure constant from magneto-transport measurements on 2D electronic systems.- Gauge invariance and the quantised hall effect in two-dimensional systems.- Some remarks on the present understanding of the quantized hall effect in two dimensions.- Quantum transverse and hall resistivities in silicon MOS inversion layers at temperatures down to 12 mK.- Possible application of the quantized hall resistance to the realization of the electrical units.- Temperature dependence of the quantum hall effect in In0.53Ga0.47As-InP heterojunctions.- The quantized hall resistance and the Josephson effect.- On the two-dimensional wigner localization in high magnetic fields.- Negative magnetoresistance and Anderson localization in Si-MOSFETs and other 2D systems in semiconductor interfaces.- Electron-electron interaction effects in p-type germanium inversion layers.- Anharmonic effects in two-dimensional electron solids in magnetic fields.- Localisation and scaling of resistance of disordered systems including magnetic field effects.- High field magnetotransport IN GaAs/AlGaAs heterojunctions and SI mosfets.- Magnetotransport in GaInAs-InP heterojunctions and superlattices.- Quantum transport in GaInAs-AlInAs heterojunctions.- Bias voltage dependence of the temperature of hot n-Si inversion layer electrons in high magnetic fields.- Magnetoresistance in a two-dimensional impurity band.- Magnetoconductivity and cyclotron resonance studies on Na+-contaminated Si-SiO2-interfaces.- On the screening of impurities by a two dimensional electron gas in high magnetic fields.- Valley phase transition of Si inversion layers in high magnetic fields.- Electrical properties of layered materials in high magnetic fields.- Quantum oscillatory effect in graphite intercalation compounds.- Magneto-optical experiments on a thin InAs LAyer confined between GaSb in a parallel and perpendicular magnetic field.- Electronic structure of semiconductor superlattices.- Inelastic light scattering by two dimensional electron systems in high magnetic fields.- Anomalous cyclotron resonance of 2D electrons in AlxGa1 xAs/GaAs heterojunctions.- Faraday rotation and ellipticity in electron inversion layers of Si MOS structures.- Magnetooptical studies of deep impurities in III-V compounds.- Magneto optics of II-VI compounds under low and high excitation.- Magneto-reflectance of the B-exciton of CdS.- Magneto-optical studies of donor impurities under high pressure.- Magnetically tunable far infrared emitters and detectors.- Magnetooptical studies of phase transition in IV-VI compounds.- Transport properties in the active layer of a double heterostructure infection laser measured by a strong magnetic field.- Quantum oscillations of indirect interband magnetoabsorption below the Burstein edge.- Neutral bound excitons in a magnetic field.- Magneto-oscillation of relaxation time in electron hole-drops.- Experimental verification of nodal surface number conservation rule in magneto-optical effects of hydrogenic exciton.- Identification of contaminating donors in III-V compounds by far-infrared laser magneto-optical studies.- Magnetoplasma oscillations in a small conducting sphere.- Two-Photon spectroscopy in InSb at high magnetic fields.- Electron spin resonance in InSb under uniaxial stress.- Far-Infrared cyclotron resonance of hot carriers in InSb.- Magneto-thermal conductivity oscillations in n-type InSb.- Infrared emission due to the magnetoelectric-photo effect in InSb.- Optically pumped recombination radiation in zincblendesemiconductors under crossed magnetic and strain fields.- The metal- non metal transition in n-type InSb in high magnetic fields.- Shubnikov-de Haas effect in heavily doped n-InSb under pressure.- Interaction between T and L minima associated impurity states in n-InSb.- Anomalous NMR relaxation peak in InSb in the extreme quanium limit.- Dielectric function of Zero-Gap HiCdTe and HgMnte in a magnetic field.- 572 pp. Englisch. N° de réf. du vendeur 9783540119968
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Application of High Magnetic Fields in Semiconductor Physics
Edité par
Springer Berlin Heidelberg, 1983
ISBN 10 : 3540119965
ISBN 13 : 9783540119968
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Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Precision determination of h/e2 and the fine-structure constant from magneto-transport measurements on 2D electronic systems.- Gauge invariance and the quantised hall effect in two-dimensional systems.- Some remarks on the present understanding of the quant. N° de réf. du vendeur 4881634
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Application of High Magnetic Fields in Semiconductor Physics
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Etat : New. pp. 572. N° de réf. du vendeur 26101113555
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Application of High Magnetic Fields in Semiconductor Physics
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Application of High Magnetic Fields in Semiconductor Physics | Proceedings of the International Conference Held in Grenoble, France, September 13-17, 1982
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Taschenbuch. Etat : Neu. Application of High Magnetic Fields in Semiconductor Physics | Proceedings of the International Conference Held in Grenoble, France, September 13-17, 1982 | G. Landwehr | Taschenbuch | xii | Englisch | 1983 | Springer | EAN 9783540119968 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. N° de réf. du vendeur 102155129
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Application of High Magnetic Fields in Semiconductor Physics
Edité par
Springer, Springer Vieweg Mär 1983, 1983
ISBN 10 : 3540119965
ISBN 13 : 9783540119968
Neuf
Taschenbuch
Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
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Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -Precision determination of h/e2 and the fine-structure constant from magneto-transport measurements on 2D electronic systems.- Gauge invariance and the quantised hall effect in two-dimensional systems.- Some remarks on the present understanding of the quantized hall effect in two dimensions.- Quantum transverse and hall resistivities in silicon MOS inversion layers at temperatures down to 12 mK.- Possible application of the quantized hall resistance to the realization of the electrical units.- Temperature dependence of the quantum hall effect in In0.53Ga0.47As-InP heterojunctions.- The quantized hall resistance and the Josephson effect.- On the two-dimensional wigner localization in high magnetic fields.- Negative magnetoresistance and Anderson localization in Si-MOSFETs and other 2D systems in semiconductor interfaces.- Electron-electron interaction effects in p-type germanium inversion layers.- Anharmonic effects in two-dimensional electron solids in magnetic fields.- Localisation and scaling of resistance of disordered systems including magnetic field effects.- High field magnetotransport IN GaAs/AlGaAs heterojunctions and SI mosfets.- Magnetotransport in GaInAs-InP heterojunctions and superlattices.- Quantum transport in GaInAs-AlInAs heterojunctions.- Bias voltage dependence of the temperature of hot n-Si inversion layer electrons in high magnetic fields.- Magnetoresistance in a two-dimensional impurity band.- Magnetoconductivity and cyclotron resonance studies on Na+-contaminated Si-SiO2-interfaces.- On the screening of impurities by a two dimensional electron gas in high magnetic fields.- Valley phase transition of Si inversion layers in high magnetic fields.- Electrical properties of layered materials in high magnetic fields.- Quantum oscillatory effect in graphite intercalation compounds.- Magneto-optical experiments on a thin InAs LAyer confined between GaSb in a parallel and perpendicular magnetic field.- Electronic structure of semiconductor superlattices.- Inelastic light scattering by two dimensional electron systems in high magnetic fields.- Anomalous cyclotron resonance of 2D electrons in AlxGa1 xAs/GaAs heterojunctions.- Faraday rotation and ellipticity in electron inversion layers of Si MOS structures.- Magnetooptical studies of deep impurities in III-V compounds.- Magneto optics of II-VI compounds under low and high excitation.- Magneto-reflectance of the B-exciton of CdS.- Magneto-optical studies of donor impurities under high pressure.- Magnetically tunable far infrared emitters and detectors.- Magnetooptical studies of phase transition in IV-VI compounds.- Transport properties in the active layer of a double heterostructure infection laser measured by a strong magnetic field.- Quantum oscillations of indirect interband magnetoabsorption below the Burstein edge.- Neutral bound excitons in a magnetic field.- Magneto-oscillation of relaxation time in electron hole-drops.- Experimental verification of nodal surface number conservation rule in magneto-optical effects of hydrogenic exciton.- Identification of contaminating donors in III-V compounds by far-infrared laser magneto-optical studies.- Magnetoplasma oscillations in a small conducting sphere.- Two-Photon spectroscopy in InSb at high magnetic fields.- Electron spin resonance in InSb under uniaxial stress.- Far-Infrared cyclotron resonance of hot carriers in InSb.- Magneto-thermal conductivity oscillations in n-type InSb.- Infrared emission due to the magnetoelectric-photo effect in InSb.- Optically pumped recombination radiation in zincblendesemiconductors under crossed magnetic and strain fields.- The metal- non metal transition in n-type InSb in high magnetic fields.- Shubnikov-de Haas effect in heavily doped n-InSb under pressure.- Interaction between T and L minima associated impurity states in n-InSb.- Anomalous NMR relaxation peak in InSb in the extreme quanium limit.- Dielectric function of Zero-Gap HiCdTe and HgMnte in a magnetic field.-Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 572 pp. Englisch. N° de réf. du vendeur 9783540119968
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