Predictive Simulation of Semiconductor Processing: Status and Challenges - Couverture rigide

Couverture rigide

ISBN 10 : 3540204814 ISBN 13 : 9783540204817

Editeur : Springer-Verlag Berlin and Heidelberg GmbH & Co. K, 2004

Synopsis

Predictive Simulation of Semiconductor Processing enables researchers and developers to extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms employed in device fabrication, such as diffusion, ion implantation, epitaxy, defect formation and annealing, and contamination. This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool.

A propos du livre

À propos de l?auteur

J. Dabrowski: Born in Warsaw, Poland, Sept. 29, 1958. PhD, Institute of Physics of the Polish Academy of Science (IF PAN), Warsaw, 1989. Scientific staff member IF PAN 1983-1992; postdoctoral fellow Fritz Haber Inbstitute of the Max Planck Society, Berlin, Germany, 1990-1991; postdoctoral fellow Xerox Palo Alto Research Center, California, 1992; since 1993 with IHP-microelectronics, Frankfurt (Oder), Germany. Conference series chairman, Challenges in Predictive Process Simulation (1997, 2000, 2002); international advisory commmittee member, International Training Institute for Materials Science, Hanoi, Vietnam. Project leader, German Research Society (1998-2000); von Neuman Institute for Computing (since 1993). Author (monograph), "Silicon surfaces and formation of interfaces; basic science in the industrial world" (World Scientific, 2000). Editor (book), ""Recent Developments in Vacuum Science and Technology" (Research Signpost, 2003). Research in atomic diffusion mechanism in solid state; atomic structure of surfaces and semiconductor/dielectric interfaces; atomic structure of defects in semiconductors and insulators; signal processing for telecommunication. Achievements include discovery of atomic structure of the clean Si(113) surface; atomic structure of the main electron trap in GaAs (EL2 defect); atomic structure of the interface between a high-K dielectric (Pr₂O₃) and Si(001). Patents for silicon microelectronic technology; patents pending for telecommunication.

Détails de l'édition

• Éditeur: Springer-Verlag Berlin and Heidelberg GmbH & Co. K
• Date d'édition: 2004
• Langue: anglais
• ISBN 10: 3540204814
• ISBN 13: 9783540204817
• Reliure: Relié
• Nombre de pages: 507
• Éditeur: Dabrowski Jarek, Weber Eicke R.
• Coordonnées du fabricant: ProductSafety@springernature.com; ProductSafety@springernature.com; ; Poststr. 9; Darmstadt; 64293; Allemagne