This is one of the first application-orientated books on the subject. The main topics are magnetic sensors with high resolutions and magnetic read heads with high sensitivities, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memory (MRAM) with non-volatile non-destructive and radiation-hard characteristics.
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
This book deals with the application of giant magneto-resistance (GMR) effects to electronic devices. It will appeal to engineers and graduate students in the fields of electronic devices and materials. The main subjects are magnetic sensors with high resolution and magnetic read heads with high sensitivity, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memories (MRAM) with non-volatile non-destructive and radiation-resistant characteristics. Other topics include future GMR devices based on bipolar spin transistors, spin field-effect transistors (FETs) and double-tunnel junctions.
Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.
Vendeur : Antiquariat Bookfarm, Löbnitz, Allemagne
Hardcover. Etat : Gut. Ex-library with stamp and library-signature. GOOD condition, some traces of use. C-02762 9783540418191 Sprache: Englisch Gewicht in Gramm: 1050. N° de réf. du vendeur 2488641
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Etat : very_good. Gently read. May have name of previous ownership, or ex-library edition. Binding tight; spine straight and smooth, with no creasing; covers clean and crisp. Minimal signs of handling or shelving. 100% GUARANTEE! Shipped with delivery confirmation, if you're not satisfied with purchase please return item! Ships USPS Media Mail. N° de réf. du vendeur OTV.3540418199.VG
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Vendeur : Mispah books, Redhill, SURRE, Royaume-Uni
Hardcover. Etat : Like New. Like NewLIKE NEW. book. N° de réf. du vendeur ERICA85535404181993
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Vendeur : GreatBookPrices, Columbia, MD, Etats-Unis
Etat : As New. Unread book in perfect condition. N° de réf. du vendeur 915855
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Vendeur : moluna, Greven, Allemagne
Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. First application-oriented book on this topicThis is one of the first application-orientated books on the subject. The main topics are magnetic sensors with high resolutions and magnetic read heads with high sensitivities, required for hard-disk driv. N° de réf. du vendeur 4889462
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Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Buch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In the last decade after the discovery of 'giant magnetoresistance effects' in me tallic multilayers worldwide developments in basic research and in engineering applications have been achieved, and various remarkable results have been ob tained in both fields. On the basic research into the GMR effects an excellent re view book edited by Hartmann was published in 1999, entitled 'Magnetic Multi layers and Giant Magnetoresistance', and it describes the experimental and theoretical aspects of GMR studies and the magneto-optics in metallic multilayers, including applications in electronic data storage fields. This book aims to give an overview on the electronics applications of the GMR in metallic multilayers, espe cially on the sensors and memories in magnetic data storage, the main concerns of electronic engineers. If the mean free path of conduction electrons is longer than the period of the multilayer, and for a low applied magnetic field magnetizations in the adjacent magnetic layers are in antiparallel, the GMR effect in magnetic metallic multilay ers occurs due to the resistance change in the electric current flowing in the layer plain, with a change in the magnetization from antiparallel to parallel alignment by an applied magnetic field (CIP mode), i. e. , in the saturation field magnetiza tions are in parallel and the resistance is lowered. The saturation field H, is given by the RKKY-like magnetic coupling between adjacent magnetic layers through a nonmagnetic conductive layer between the layers. 192 pp. Englisch. N° de réf. du vendeur 9783540418191
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Vendeur : GreatBookPrices, Columbia, MD, Etats-Unis
Etat : New. N° de réf. du vendeur 915855-n
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Vendeur : preigu, Osnabrück, Allemagne
Buch. Etat : Neu. Giant Magneto-Resistance Devices | E. Hirota (u. a.) | Buch | Springer Series in Surface Sciences | ix | Englisch | 2002 | Springer | EAN 9783540418191 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand. N° de réf. du vendeur 104632759
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Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Buch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - In the last decade after the discovery of 'giant magnetoresistance effects' in me tallic multilayers worldwide developments in basic research and in engineering applications have been achieved, and various remarkable results have been ob tained in both fields. On the basic research into the GMR effects an excellent re view book edited by Hartmann was published in 1999, entitled 'Magnetic Multi layers and Giant Magnetoresistance', and it describes the experimental and theoretical aspects of GMR studies and the magneto-optics in metallic multilayers, including applications in electronic data storage fields. This book aims to give an overview on the electronics applications of the GMR in metallic multilayers, espe cially on the sensors and memories in magnetic data storage, the main concerns of electronic engineers. If the mean free path of conduction electrons is longer than the period of the multilayer, and for a low applied magnetic field magnetizations in the adjacent magnetic layers are in antiparallel, the GMR effect in magnetic metallic multilay ers occurs due to the resistance change in the electric current flowing in the layer plain, with a change in the magnetization from antiparallel to parallel alignment by an applied magnetic field (CIP mode), i. e. , in the saturation field magnetiza tions are in parallel and the resistance is lowered. The saturation field H, is given by the RKKY-like magnetic coupling between adjacent magnetic layers through a nonmagnetic conductive layer between the layers. N° de réf. du vendeur 9783540418191
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Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Buch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -The discovery of the Giant Magnetoresistance Effect revolutionized the magnetic storaging technology. This book gives insight into the potential and application of this effect. The book appeals to materials researchers, physicists, engineers and advanced students.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 192 pp. Englisch. N° de réf. du vendeur 9783540418191
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