Gas Source Molecular Beam Epitaxy: Growth and Properties of Phosphorus Containing III-V Heterostructures - Couverture rigide

Panish, Morton B.; Temkin, Henryk

 
9783540565406: Gas Source Molecular Beam Epitaxy: Growth and Properties of Phosphorus Containing III-V Heterostructures
Couverture rigide
ISBN 10 : 354056540X ISBN 13 : 9783540565406
Editeur : Springer-Verlag Berlin and Heidelberg GmbH & Co. K, 1993

Synopsis

The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.

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Éditeur
Springer-Verlag Berlin and Heidelberg GmbH & Co. K
Date d'édition
1993
Langue
anglais
ISBN 10 
354056540X
ISBN 13 
9783540565406
Reliure
Relié
Nombre de pages
442
Coordonnées du fabricant
non disponible
Personne responsable
CMN Printpool Inh. Mathis Neumann
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