Articles liés à Crystal defects in multicrystalline silicon: Formation...

Crystal defects in multicrystalline silicon: Formation and growth of crystal defects in directionally solidified multicrystalline silicon for solar cells - Couverture souple

Ryningen, Birgit

 
9783639052329: Crystal defects in multicrystalline silicon: Formation and growth of crystal defects in directionally solidified multicrystalline silicon for solar cells
Couverture souple
ISBN 10 : 3639052323 ISBN 13 : 9783639052329
Editeur : VDM Verlag, 2009

Synopsis

The photovoltaic industry has grown fast the recent years, but the price per watt has not jet reached grid parity. A further increase in solar cell efficiency is therefore needed. It is suggested in this work that the main quality problem in multicrystalline silicon wafers is the existence of dislocation clusters covering large wafer areas. Dislocation formation mechanisms such as punch-out from precipitates with a thermal expansion coefficient different from that of the silicon matrix, intergranular ? and intragranular hardening and development of strain fields due to differences in the elasticity module between different grains are reviewed. For dislocations nucleated by an angular grain boundary a multiplication and growth mechanism is proposed where dislocations can cross slip and line up at certain crystallographic directions during crystal growth. This work would be of interest for anybody wanting to have an introduction to dislocation theory relevant for solar cell silicon, or anybody being interested in improving solar cell efficiency.

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

Présentation de l'éditeur

The photovoltaic industry has grown fast the recent years, but the price per watt has not jet reached grid parity. A further increase in solar cell efficiency is therefore needed. It is suggested in this work that the main quality problem in multicrystalline silicon wafers is the existence of dislocation clusters covering large wafer areas. Dislocation formation mechanisms such as punch-out from precipitates with a thermal expansion coefficient different from that of the silicon matrix, intergranular ? and intragranular hardening and development of strain fields due to differences in the elasticity module between different grains are reviewed. For dislocations nucleated by an angular grain boundary a multiplication and growth mechanism is proposed where dislocations can cross slip and line up at certain crystallographic directions during crystal growth. This work would be of interest for anybody wanting to have an introduction to dislocation theory relevant for solar cell silicon, or anybody being interested in improving solar cell efficiency.

Biographie de l'auteur

Birgit Ryningen, PhD: Studied material science at the Norwegian University of Science and Technology (NTNU).

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
VDM Verlag
Date d'édition
2009
Langue
anglais
ISBN 10 
3639052323
ISBN 13 
9783639052329
Reliure
Broché
Nombre de pages
124
Coordonnées du fabricant
non disponible
Personne responsable
non disponible