The Silicon Carbide Mos Capacitor - Couverture souple

Marinella, Matthew

Couverture souple

ISBN 10 : 3639089057 ISBN 13 : 9783639089059

Editeur : VDM Verlag Dr. Mueller E.K., 2008

Synopsis

Only a few years after the invention of thetransistor, William Shockley declared silicon carbide(SiC) an excellent material for high temperaturesemiconductor devices. In fact, he predicted that itwould be the most important electronic material to follow silicon. Furthermore, since SiC has the ability to grow thermal silicon dioxide, this would seem to be the ideal material for a high temperature metal oxide semiconductor field effect transistor (MOSFET). However, over a half century later, SiC technology has yet to attain widespread use in commercial electronic devices. This is due to number of significant hurdles; mainly the relatively high cost and diffity of creating high quality SiC materials and its thermal SiO2 films. In this work, quality of the SiC/SiO2 system is studied using a simple structure, the metal oxide semiconductor (MOS)capacitor. Well developed methods, such as the pulsedMOS capacitor technique, are applied extensively tothis device. This work is partiarly valuable forgraduate students, professors, electrical engineers,and scientists working to make the SiC MOSFET a reality.

Détails de l'édition

• Éditeur: VDM Verlag Dr. Mueller E.K.
• Date d'édition: 2008
• Langue: anglais
• ISBN 10: 3639089057
• ISBN 13: 9783639089059
• Reliure: Broché
• Nombre de pages: 148
• Coordonnées du fabricant: non disponible
• Personne responsable: non disponible