Simulation Methodology to Compare Alternatives to Silicon Device - Couverture souple

Jin, Yawei

 
9783639105605: Simulation Methodology to Compare Alternatives to Silicon Device
Couverture souple
ISBN 10 : 3639105605 ISBN 13 : 9783639105605
Editeur : VDM Verlag Dr. Müller, 2009

Synopsis

Practical realization of low-power, high-speed transistor technologies for future generation nano- electronics can be achieved with novel structures, such as FinFET, tri-gate or with the integration of exotic channel materials,such as Gallium Nitride (GaN), into Fully-Depleted SOI(FDSOI) transistor architectures. Novel Structures are the most promising candidates for logic devices with sub-20nm gate length. They can increase gate control and suppress short channel effects. To compare the feasibility of these different structures and to project the device performance, technology CAD (TCAD) simulation is a reasonable method. The III-V semiconductors, such as Gallium Nitride (GaN), have high maximum electron drift velocities and ballistic mean free paths, which would enable high-speed transistor operation at very low voltages with gate lengths below 10nm. Since it¿s impractical for experiments currently, TCAD simulation can be used to project performance goals for aggressively scaled devices. This research focus on the methodology to compare different technologies for alternative to Silicon based traditional logic device using TCAD simulations.

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

Présentation de l'éditeur

Practical realization of low-power, high-speed transistor technologies for future generation nano- electronics can be achieved with novel structures, such as FinFET, tri-gate or with the integration of exotic channel materials,such as Gallium Nitride (GaN), into Fully-Depleted SOI(FDSOI) transistor architectures. Novel Structures are the most promising candidates for logic devices with sub-20nm gate length. They can increase gate control and suppress short channel effects. To compare the feasibility of these different structures and to project the device performance, technology CAD (TCAD) simulation is a reasonable method. The III-V semiconductors, such as Gallium Nitride (GaN), have high maximum electron drift velocities and ballistic mean free paths, which would enable high-speed transistor operation at very low voltages with gate lengths below 10nm. Since it¿s impractical for experiments currently, TCAD simulation can be used to project performance goals for aggressively scaled devices. This research focus on the methodology to compare different technologies for alternative to Silicon based traditional logic device using TCAD simulations.

Biographie de l'auteur

Yawei Jin was born in 1979.He got his PhD from North Carolina State University in 2006.His work focuses on simulation and modeling of nano-scale logic devices including novel structure and III-nitride based devices for alternative to tranditional MOSFET.He also worked as intern in Micro&Nano Structure Technology Lab at GE Research in 2005.

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
VDM Verlag Dr. Müller
Date d'édition
2009
Langue
anglais
ISBN 10 
3639105605
ISBN 13 
9783639105605
Reliure
Broché
Nombre de pages
188
Coordonnées du fabricant
non disponible
Personne responsable
non disponible