Enhanced Light Extraction From GaN-based LEDs With PS Nanospheres: Nanosphere layer on blue LEDs and nano-patterned sapphire substrate LEDs fabricated by nanosphere lithography - Couverture souple

Kao, Chien-Chih

 
9783639115062: Enhanced Light Extraction From GaN-based LEDs With PS Nanospheres: Nanosphere layer on blue LEDs and nano-patterned sapphire substrate LEDs fabricated by nanosphere lithography
Couverture souple
ISBN 10 : 3639115066 ISBN 13 : 9783639115062
Editeur : VDM Verlag Dr. Müller, 2009

Synopsis

In this book, we have demonstrated the surface roughness and nano-PSS LED fabricated by nanosphere lithography. In surface roughness LED, We have successfully proposed and fabricated GaN-based LEDs with nanosphere layers. The surface texturing process is easily and quickly achieved by using nanosphere layers. This coating of the nanosphere layers does not affect the electrical characteristic of the LED. The periodic structure of nanosphere layers enhances the light extraction efficiency of the LED. The luminance intensities of the LEDs with nanosphere layers of 300 nm and 500 nm diameters were seen to increase by 5.72% and 9.05% at 20 mA, respectively. In nano-PSS LED, the crystalline quality of GaN epilayer was estimated by XRD. The FWHM of nano-PSS LEDs and micro-PSS LEDs were narrower than that conventional LED. This means that we could improve crystal quality of GaN epilayer by using nano-PSS LEDs and micro-PSS. The nano-PSS LED also has better electrical property than conventional LED. The light output power of the nano- PSS LED was 18.8%~25.2%higher than the conventional LED.

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

Présentation de l'éditeur

In this book, we have demonstrated the surface roughness and nano-PSS LED fabricated by nanosphere lithography. In surface roughness LED, We have successfully proposed and fabricated GaN-based LEDs with nanosphere layers. The surface texturing process is easily and quickly achieved by using nanosphere layers. This coating of the nanosphere layers does not affect the electrical characteristic of the LED. The periodic structure of nanosphere layers enhances the light extraction efficiency of the LED. The luminance intensities of the LEDs with nanosphere layers of 300 nm and 500 nm diameters were seen to increase by 5.72% and 9.05% at 20 mA, respectively. In nano-PSS LED, the crystalline quality of GaN epilayer was estimated by XRD. The FWHM of nano-PSS LEDs and micro-PSS LEDs were narrower than that conventional LED. This means that we could improve crystal quality of GaN epilayer by using nano-PSS LEDs and micro-PSS. The nano-PSS LED also has better electrical property than conventional LED. The light output power of the nano- PSS LED was 18.8%~25.2%higher than the conventional LED.

Biographie de l'auteur

C.C.Kao, Y.K.Su and J.J.Chen are with the institute of Microelectronics and department of electrical engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C. (e-mail: q1897103@mail.ncku.edu.tw).

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
VDM Verlag Dr. Müller
Date d'édition
2009
Langue
anglais
ISBN 10 
3639115066
ISBN 13 
9783639115062
Reliure
Broché
Nombre de pages
64
Coordonnées du fabricant
non disponible
Personne responsable
non disponible