Compact Modeling for MOSFET Devices: Small-Signal Models for Multiple-Gate Transistors - Couverture souple

Moldovan, Oana

 
9783639148824: Compact Modeling for MOSFET Devices: Small-Signal Models for Multiple-Gate Transistors
Couverture souple
ISBN 10 : 3639148827 ISBN 13 : 9783639148824
Editeur : VDM Verlag, 2009

Synopsis

Compact models of devices are used in circuit simulators, in order to predict the functionality of circuits. Multiple-gate devices will be preferred in nanoscale circuits, thus calling for accurate and reliable compact models, an important prerequisite for successful circuit design. In this book we present explicit compact charge and capacitance models adapted for doped and undoped devices (doped Double-Gate (DG) MOSFETs, undoped DG MOSFETs, undoped Ultra-Thin-Body (UTB) MOSFETs and undoped Surrounding-Gate Transistors (SGTs)). The main advantage of our work is the analytical and explicit character of the charge and capacitance model that makes it easy to be implemented in circuit simulators. We also show the impact of important geometrical parameters such as source and drain thickness, fin spacing, spacer width, on the parasitic fringing capacitance component of FinFETs and PI-gate MOSFETs.

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

Présentation de l'éditeur

Compact models of devices are used in circuit simulators, in order to predict the functionality of circuits. Multiple-gate devices will be preferred in nanoscale circuits, thus calling for accurate and reliable compact models, an important prerequisite for successful circuit design. In this book we present explicit compact charge and capacitance models adapted for doped and undoped devices (doped Double-Gate (DG) MOSFETs, undoped DG MOSFETs, undoped Ultra-Thin-Body (UTB) MOSFETs and undoped Surrounding-Gate Transistors (SGTs)). The main advantage of our work is the analytical and explicit character of the charge and capacitance model that makes it easy to be implemented in circuit simulators. We also show the impact of important geometrical parameters such as source and drain thickness, fin spacing, spacer width, on the parasitic fringing capacitance component of FinFETs and PI-gate MOSFETs.

Biographie de l'auteur

Oana Moldovan; PhD. in Electronics Engineering from Universitat Rovira i Virgili, Spain. Postdoctoral researcher at the Universitat Autònoma de Barcelona. Benjamin Iñiguez; PhD. in Physics from the University of the Balearic Islands, Spain. Titular Professor in the Department of Electronic Engineering, Universitat Rovira i Virgili, Spain.

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
VDM Verlag
Date d'édition
2009
Langue
anglais
ISBN 10 
3639148827
ISBN 13 
9783639148824
Reliure
Broché
Nombre de pages
152
Coordonnées du fabricant
non disponible
Personne responsable
non disponible