This book contains the discussion and experimental results on the kinetics of the sub-monolayer adsorption & desorption of Ga adatoms on different silicon surfaces under ultra high vacuum condition. Different aspects of surface science as well as related characterization techniques to probe Ga/Si interface are discussed. Several Ga induced superstructural phases were observed during adsorption and desorption of Ga from Si(111)-7x7 and Si(110)-16x2 reconstructed surfaces. We have discussed and proposed models for the growth and also fr several superstructural phases formed by Ga adatoms on clean reconstructed silicon surfaces. Complete 2D Phase diagrams for different interfacial systems have also been discussed by combining different AES/LEED experiments all together. These modified Ga induced different superstructural phases formed on Si(111) can be used as a template for high quality and low defect III-Nitrides growth on Si surfaces.
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
This book contains the discussion and experimental results on the kinetics of the sub-monolayer adsorption & desorption of Ga adatoms on different silicon surfaces under ultra high vacuum condition. Different aspects of surface science as well as related characterization techniques to probe Ga/Si interface are discussed. Several Ga induced superstructural phases were observed during adsorption and desorption of Ga from Si(111)-7x7 and Si(110)-16x2 reconstructed surfaces. We have discussed and proposed models for the growth and also fr several superstructural phases formed by Ga adatoms on clean reconstructed silicon surfaces. Complete 2D Phase diagrams for different interfacial systems have also been discussed by combining different AES/LEED experiments all together. These modified Ga induced different superstructural phases formed on Si(111) can be used as a template for high quality and low defect III-Nitrides growth on Si surfaces.
Author's vita: Dr. Praveen Kumar, INSPIRE Faculty, CSIR-CSIO, Chandigarh, India. Ms. Pooja Devi, Scientist, CSIR-CSIO, Chandigarh, India. Dr. Mahesh Kumar, Scientist, CSIR-NPL, Delhi, India. Prof. S. M. Shivaprasad, ICMS, JNCASR, Bangalore, India.
Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.
Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book contains the discussion and experimental results on the kinetics of the sub-monolayer adsorption & desorption of Ga adatoms on different silicon surfaces under ultra high vacuum condition. Different aspects of surface science as well as related characterization techniques to probe Ga/Si interface are discussed. Several Ga induced superstructural phases were observed during adsorption and desorption of Ga from Si(111)-7x7 and Si(110)-16x2 reconstructed surfaces. We have discussed and proposed models for the growth and also fr several superstructural phases formed by Ga adatoms on clean reconstructed silicon surfaces. Complete 2D Phase diagrams for different interfacial systems have also been discussed by combining different AES/LEED experiments all together. These modified Ga induced different superstructural phases formed on Si(111) can be used as a template for high quality and low defect III-Nitrides growth on Si surfaces. 108 pp. Englisch. N° de réf. du vendeur 9783639863437
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Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Kumar PraveenAuthor s vita: Dr. Praveen Kumar, INSPIRE Faculty, CSIR-CSIO, Chandigarh, India. Ms. Pooja Devi, Scientist, CSIR-CSIO, Chandigarh, India. Dr. Mahesh Kumar, Scientist, CSIR-NPL, Delhi, India. . N° de réf. du vendeur 151404939
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Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book contains the discussion and experimental results on the kinetics of the sub-monolayer adsorption & desorption of Ga adatoms on different silicon surfaces under ultra high vacuum condition. Different aspects of surface science as well as related characterization techniques to probe Ga/Si interface are discussed. Several Ga induced superstructural phases were observed during adsorption and desorption of Ga from Si(111)-7x7 and Si(110)-16x2 reconstructed surfaces. We have discussed and proposed models for the growth and also fr several superstructural phases formed by Ga adatoms on clean reconstructed silicon surfaces. Complete 2D Phase diagrams for different interfacial systems have also been discussed by combining different AES/LEED experiments all together. These modified Ga induced different superstructural phases formed on Si(111) can be used as a template for high quality and low defect III-Nitrides growth on Si surfaces.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 108 pp. Englisch. N° de réf. du vendeur 9783639863437
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Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book contains the discussion and experimental results on the kinetics of the sub-monolayer adsorption & desorption of Ga adatoms on different silicon surfaces under ultra high vacuum condition. Different aspects of surface science as well as related characterization techniques to probe Ga/Si interface are discussed. Several Ga induced superstructural phases were observed during adsorption and desorption of Ga from Si(111)-7x7 and Si(110)-16x2 reconstructed surfaces. We have discussed and proposed models for the growth and also fr several superstructural phases formed by Ga adatoms on clean reconstructed silicon surfaces. Complete 2D Phase diagrams for different interfacial systems have also been discussed by combining different AES/LEED experiments all together. These modified Ga induced different superstructural phases formed on Si(111) can be used as a template for high quality and low defect III-Nitrides growth on Si surfaces. N° de réf. du vendeur 9783639863437
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Taschenbuch. Etat : Neu. Probing the kinetics of Ga/Si interfaces | Praveen Kumar (u. a.) | Taschenbuch | 108 S. | Englisch | 2016 | Scholars' Press | EAN 9783639863437 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. N° de réf. du vendeur 103782565
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