Wo Licht ist, ist auch Schatten! ("More light, more shadow!" or simpler: "Nothing is perfect") -Johann Wolfgang von Goethe, from Got ] z von Berlichingen, Act I There exist already about ten books (e. g. [1-8]) - not counting the many conf- enceproceedingsvolumes- onthe differentaspectsofSi-basedphotonicsincluding also the issue of silicon-basedlight emission. Why is now anotherone neededabout this subject, and even more, exclusively about a special type of light emitters? This book summarizes all aspects of the development of rare earth (RE) c- taining MOS devices fabricated by ion implantation as the key technology and critically re ects the related referencesthroughoutthe different chapters. This work was mainly done in the course of the last 10 years. Preliminary work for this goal, undertaken mostly in the nineties, was based on the introduction of group IV e- ments (Si, Ge, Sn) into the thermally grown silicon dioxide leading to the highest power ef ciency values in the blue-violet wavelength range. This success inspired us to use the REs as means of exploring other wavelength ranges with the same or even higher power ef ciencies. After an historical introduction of the REs and silicon-based light emission, Chap. 1 presents a review of electroluminescence from MOS-type light emitters, based on silicon and its technology. The achievement of an optimized material for electrically driven light emission, that is, ef cient emission with reasonable reliability, is only possible with a deep knowledge of the materials properties det- miningtheelectro-optical(orphotonic)properties(seeChap. 2).
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications.
Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.
Vendeur : Brook Bookstore On Demand, Napoli, NA, Italie
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Buch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications. It describes the structural formation processes in the gate oxide during fabrication and under operation, how this microstructure development will affect the electrical device performance and how both microstructure and electrical characteristics determine the optoelectronic features of the light emitters. However, most of the discussed physical processes as well as the described fabrication methods and device characterization techniques are of general interest and are beyond the scope of this type of light emitter. The book will be of value to engineers, physicists, and scientists dealing either with Si based photonics in particular or optoelectronic device fabrication and characterization in general. 192 pp. Englisch. N° de réf. du vendeur 9783642144462
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Gebunden. Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Summarizes the current knowledge in implanted rare earth materialsIncludes structural microelectric device aspectsA reference work for researchers and engineers alikeSummarizes the current knowledge in implanted rare earth materialsIncludes st. N° de réf. du vendeur 5050512
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Buch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -Silicon-Based Light Emission.- Microstructure.- Electrical Properties.- Electroluminescence Spectra.- Electroluminescence Efficiency.- Stability and Degradation.- Applications.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 192 pp. Englisch. N° de réf. du vendeur 9783642144462
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Buch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications. It describes the structural formation processes in the gate oxide during fabrication and under operation, how this microstructure development will affect the electrical device performance and how both microstructure and electrical characteristics determine the optoelectronic features of the light emitters. However, most of the discussed physical processes as well as the described fabrication methods and device characterization techniques are of general interest and are beyond the scope of this type of light emitter. The book will be of value to engineers, physicists, and scientists dealing either with Si based photonics in particular or optoelectronic device fabrication and characterization in general. N° de réf. du vendeur 9783642144462
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