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Novel NanoScale MOSFET with TCAD: Use of TCAD tool for the fabrication of nanoscale bulk MOSFET and Its Performance Investigation - Couverture souple

Amin, Intekhab; Alam, Shah

 
9783659197864: Novel NanoScale MOSFET with TCAD: Use of TCAD tool for the fabrication of nanoscale bulk MOSFET and Its Performance Investigation
Couverture souple
ISBN 10 : 3659197866 ISBN 13 : 9783659197864
Editeur : LAP LAMBERT Academic Publishing, 2012

Synopsis

Scaling of MOSFET is being carried out through several dcades and we moved from micron to nano scale region. Scaling improves performance but at the same time it has some adverse effect, because as MOSFET is scaled down the source and drain come so close to each other so that the gate is loosing control over the channel is called short channel effect. Here work have been carried by doing engineering fabrication technique to reduce its SCE under 40nm channel length of an engineered device and is compared the non engineered device of having same technology to have better short channel immunity of an engineered device as compared to that of non engineered device. Since scaling means scaling of its supply voltage also if not then electric field will become a severe factor creates impact ionization and hence its performance by creating electron-holes pair so supply voltage has to be scaled down to reduce peak electric field.Its high frequency small signal analysis is also carried and compared.

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

Présentation de l'éditeur

Scaling of MOSFET is being carried out through several dcades and we moved from micron to nano scale region. Scaling improves performance but at the same time it has some adverse effect, because as MOSFET is scaled down the source and drain come so close to each other so that the gate is loosing control over the channel is called short channel effect. Here work have been carried by doing engineering fabrication technique to reduce its SCE under 40nm channel length of an engineered device and is compared the non engineered device of having same technology to have better short channel immunity of an engineered device as compared to that of non engineered device. Since scaling means scaling of its supply voltage also if not then electric field will become a severe factor creates impact ionization and hence its performance by creating electron-holes pair so supply voltage has to be scaled down to reduce peak electric field.Its high frequency small signal analysis is also carried and compared.

Biographie de l'auteur

The author have done A.M.I.E in Electronics & Communication Engineering and was project associate at IIT Madras in the department of Electrical Engineering, he also did his M.Tech from Z.H.C.E.T AMU aligarh and presently (2012) doing his Ph.D from NITJ.

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
LAP LAMBERT Academic Publishing
Date d'édition
2012
Langue
anglais
ISBN 10 
3659197866
ISBN 13 
9783659197864
Reliure
Broché
Nombre de pages
124
Coordonnées du fabricant
non disponible
Personne responsable
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