Characterization and Modeling of Phase-Change Memories: Case studies in materials exploration, electrical characterization, and device physics - Couverture souple

Betti Beneventi, Giovanni

 
9783659213786: Characterization and Modeling of Phase-Change Memories: Case studies in materials exploration, electrical characterization, and device physics
Couverture souple
ISBN 10 : 3659213780 ISBN 13 : 9783659213786
Editeur : LAP LAMBERT Academic Publishing, 2012

Synopsis

Non-Volatile Memory (NVM) technologies play a fundamental role in the semiconductor memory industry. The non-stop increasing of functionalitiesFinal Overview >>and performances of consumer electronic products such as digital cameras, MP3 players, smart-phones, computers, and solid-state hard disks, claims for a continuous improvement of memory capacity and features. However, Flash Memory technology, which plays the major role in the today NVM market, presents intrinsic physical constraints that hamper Flash further scaling. In this context, Phase-Change Memory (PCM) is an emerging NVM technology aiming to replace Flash in many applications. PCM indeed features superior performances, like outstanding scalability perspectives, faster programming, and higher endurance. For these reasons, PCM is a topic of ever increasing interests for the scientific community and for the microelectronics industry. “Characterization and Modeling of Phase-Change Memories” introduces the main features of the PCM technology, and discusses three case studies dealing with key aspects for the further development of advanced PCM, such as new materials, electrical characterizatio, and understanding of device physics.

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

Présentation de l'éditeur

Non-Volatile Memory (NVM) technologies play a fundamental role in the semiconductor memory industry. The non-stop increasing of functionalitiesFinal Overview >>and performances of consumer electronic products such as digital cameras, MP3 players, smart-phones, computers, and solid-state hard disks, claims for a continuous improvement of memory capacity and features. However, Flash Memory technology, which plays the major role in the today NVM market, presents intrinsic physical constraints that hamper Flash further scaling. In this context, Phase-Change Memory (PCM) is an emerging NVM technology aiming to replace Flash in many applications. PCM indeed features superior performances, like outstanding scalability perspectives, faster programming, and higher endurance. For these reasons, PCM is a topic of ever increasing interests for the scientific community and for the microelectronics industry. “Characterization and Modeling of Phase-Change Memories” introduces the main features of the PCM technology, and discusses three case studies dealing with key aspects for the further development of advanced PCM, such as new materials, electrical characterizatio, and understanding of device physics.

Biographie de l'auteur

received the Ph.D. degree in micro- andnanoelectronics from both INP Grenoble, France, and Università degli Studi di Modena and Reggio Emilia, Italy, in 2011. He contributed to the understanding of Phase-Change Memory physics publishing, on this subject, more than 15 papers on international journals and conferences.

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
LAP LAMBERT Academic Publishing
Date d'édition
2012
Langue
anglais
ISBN 10 
3659213780
ISBN 13 
9783659213786
Reliure
Broché
Nombre de pages
92
Coordonnées du fabricant
non disponible
Personne responsable
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