MIS Heterojunction Devices: SnO2/SiO2/Si MIS Heterojunction Devices for Optoelectronic Application - Couverture souple

Agool, Ibrahim R.; Tarq Salem, Evan; Muhsien Hassan, Marwa Abdul

 
9783659262722: MIS Heterojunction Devices: SnO2/SiO2/Si MIS Heterojunction Devices for Optoelectronic Application
Couverture souple
ISBN 10 : 3659262722 ISBN 13 : 9783659262722
Editeur : LAP LAMBERT Academic Publishing, 2012

Synopsis

In the present work, preparation of high quality transparent conductive SnO2 thin films by post-oxidation of vacuum evaporated tin, on quartz and silicon substrates is presented. The oxidation was achieved in a short time (90 sec) which is known as rapid thermal oxidation (RTO). Many growth parameters have been considered to specify the optimum conditions, namely, oxidation temperature and oxidation time. Optical, electrical and structural properties of SnO2 films are investigated and analyzed extensively with respect to growth conditions. After obtaining the best results for the preparation of a film. The film was used for the manufacture of MIS devices and for comparison: two types of silicon substrates were used: (n-type and p-type). The optical properties of SnO2 films revealed that the optical band gap is 3.54 eV at optimum condition. The transmission rate of SnO2 films was high (95%) which was reduced with the reduction of oxidation time, while the electrical properties of undoped SnO2 films confirm that these films are n-type and highly conductive. The electrical resistivity was found to be very sensitive to film thickness and substrate temperature.

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Présentation de l'éditeur

In the present work, preparation of high quality transparent conductive SnO2 thin films by post-oxidation of vacuum evaporated tin, on quartz and silicon substrates is presented. The oxidation was achieved in a short time (90 sec) which is known as rapid thermal oxidation (RTO). Many growth parameters have been considered to specify the optimum conditions, namely, oxidation temperature and oxidation time. Optical, electrical and structural properties of SnO2 films are investigated and analyzed extensively with respect to growth conditions. After obtaining the best results for the preparation of a film. The film was used for the manufacture of MIS devices and for comparison: two types of silicon substrates were used: (n-type and p-type). The optical properties of SnO2 films revealed that the optical band gap is 3.54 eV at optimum condition. The transmission rate of SnO2 films was high (95%) which was reduced with the reduction of oxidation time, while the electrical properties of undoped SnO2 films confirm that these films are n-type and highly conductive. The electrical resistivity was found to be very sensitive to film thickness and substrate temperature.

Biographie de l'auteur

Ibrahim R. Agool received the B.Sc degree in Physics AL-Mustansiriyah University, Baghdad , Iraq in 1973, M.Sc degrees in Aston University in Birmingham, U.K in 1982 and Ph.D degrees in Heriot-Watt University United Kingdom 1991 respectively.Marwa Abdul Muhsien Hassan Al-Janabireceived the B.Sc degree in physics from Al-Mustansiriyah university,Iraq in 2007 and M.Sc degree in Department of Physics fromAl-Mustansiriyah university, Iraq in 2007 and 2009 respectively.Evan T. Salem received the B.Sc degree in laser physics, University of technology, Applied Sciencedepartment , laser and optoelectronic branch, Iraq in 1998, M.Sc and Ph.D degrees in laser physics, University of technology, Applied Sciencedepartment , laser and optoelectronic branch, Iraq in 2001 and 2006 respectively.

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Éditeur
LAP LAMBERT Academic Publishing
Date d'édition
2012
Langue
anglais
ISBN 10 
3659262722
ISBN 13 
9783659262722
Reliure
Broché
Nombre de pages
124
Coordonnées du fabricant
non disponible
Personne responsable
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Autres éditions populaires du même titre

9783659117060: MIS heterojunction devices: SnO2/SiO2/Si MIS Heterojunction devices for optoelectronic application

Edition présentée

ISBN 10 :  3659117064 ISBN 13 :  9783659117060
Editeur : LAP LAMBERT Academic Publishing, 2012
Couverture souple