Energy-Performance Characterization of CMOS/MTJ Hybrid Circuits: Can Magnetic Tunnel Junction (MTJ) help CMOS technology become ultra-low power? - Couverture souple

Ren, Fengbo

 
9783659298912: Energy-Performance Characterization of CMOS/MTJ Hybrid Circuits: Can Magnetic Tunnel Junction (MTJ) help CMOS technology become ultra-low power?
Couverture souple
ISBN 10 : 3659298913 ISBN 13 : 9783659298912
Editeur : LAP LAMBERT Academic Publishing, 2012

Synopsis

The explosive growth of the semiconductor industry has been driven by the rapid scaling of CMOS technology. Yet, as scaling getting closer to the physical limit, the increasing device leakage and viability greatly deteriorate the energy efficiency and stability of CMOS circuits. In order to extend the scaling and alleviate the leakage problem, various emerging electrical switches have been suggested in the ITRS roadmap. However, CMOS technology will continue to advance and lead the semiconductor industry regardless. Thus, in short term, people will keep looking for new switches that are CMOS-compatible and can supplement CMOS for ultra-low-power operations. Magnetic Tunnel Junction (MTJ) is a great candidate for these goals, as its non-volatility and CMOS-compatibility allows for realizing CMOS/MTJ hybrid circuits, where the operation states can be stored in MTJ cells in a distributed fashion and fine-grain power gating can be realized to eliminate the standby power. In this book, we discuss how such hybrid logic circuits can be realized. We also characterize their energy and performance improvements over conventional CMOS designs in both circuit and architecture level benchmarks.

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

Présentation de l'éditeur

The explosive growth of the semiconductor industry has been driven by the rapid scaling of CMOS technology. Yet, as scaling getting closer to the physical limit, the increasing device leakage and viability greatly deteriorate the energy efficiency and stability of CMOS circuits. In order to extend the scaling and alleviate the leakage problem, various emerging electrical switches have been suggested in the ITRS roadmap. However, CMOS technology will continue to advance and lead the semiconductor industry regardless. Thus, in short term, people will keep looking for new switches that are CMOS-compatible and can supplement CMOS for ultra-low-power operations. Magnetic Tunnel Junction (MTJ) is a great candidate for these goals, as its non-volatility and CMOS-compatibility allows for realizing CMOS/MTJ hybrid circuits, where the operation states can be stored in MTJ cells in a distributed fashion and fine-grain power gating can be realized to eliminate the standby power. In this book, we discuss how such hybrid logic circuits can be realized. We also characterize their energy and performance improvements over conventional CMOS designs in both circuit and architecture level benchmarks.

Biographie de l'auteur

Dr. Ren received the B.Eng. degree from Zhejiang University and the M.S. and Ph.D degrees from UCLA in 2008, 2010 and 2013, respectively, all in EE. His current research interests include circuit design and design optimization for STT-RAM and efficient DSP architectures for the sparse signal processing in compressive sensing applications.

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
LAP LAMBERT Academic Publishing
Date d'édition
2012
Langue
anglais
ISBN 10 
3659298913
ISBN 13 
9783659298912
Reliure
Broché
Nombre de pages
76
Coordonnées du fabricant
non disponible
Personne responsable
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