Radiation Induced Effects in Semiconductor Devices: Theory, Experimental and Simulation Results - Couverture souple

Kulkarni, Shrinivasrao; Damle, Ramakrishna; Ravindra, M.

 
9783659336256: Radiation Induced Effects in Semiconductor Devices: Theory, Experimental and Simulation Results
Couverture souple
ISBN 10 : 3659336254 ISBN 13 : 9783659336256
Editeur : LAP LAMBERT Academic Publishing, 2013

Synopsis

When semiconductor devices operate in a radiation environment (ex: space), they undergo severe degradation. The degradation behaviour is a complex process and is dependent not only on the nature of the device but also on the radiation characteristics viz., dose, dose rate, species and the energy of radiation. The study of the effect of radiation on semiconductor devices is important both from the academic as well as technological point of view. Academically it is very important to have an understanding of the physical mechanism of the damage process and technologically it is important to assess the device performance when they need to be operated in the radiation environment. This book involves the study of radiation induced effects in Bipolar Junction Transistors planned for space applications. The devices exposed to electromagnetic radiation, 8 MeV electrons and 24 MeV protons are characterized before and after irradiation to understand the radiation induced degradation mechanism. Apart from discrete devices, heavy ion induced effects on a few space borne VLSI devices have also been carried out and results are discussed. In addition to this, some simulation results are discussed.

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Présentation de l'éditeur

When semiconductor devices operate in a radiation environment (ex: space), they undergo severe degradation. The degradation behaviour is a complex process and is dependent not only on the nature of the device but also on the radiation characteristics viz., dose, dose rate, species and the energy of radiation. The study of the effect of radiation on semiconductor devices is important both from the academic as well as technological point of view. Academically it is very important to have an understanding of the physical mechanism of the damage process and technologically it is important to assess the device performance when they need to be operated in the radiation environment. This book involves the study of radiation induced effects in Bipolar Junction Transistors planned for space applications. The devices exposed to electromagnetic radiation, 8 MeV electrons and 24 MeV protons are characterized before and after irradiation to understand the radiation induced degradation mechanism. Apart from discrete devices, heavy ion induced effects on a few space borne VLSI devices have also been carried out and results are discussed. In addition to this, some simulation results are discussed.

Biographie de l'auteur

Dr. Kulkarni obtained Ph.D.from BUB,India. Worked as a post-doc at EECS,VU, Nashville,USA. Currently working as a lead scientist of EPT-HET/SolO at IEAP,CAU,Kiel. Prof. R.Damle is a Professor in Physics, BUB, India. He obtained Ph.D. from IISc, Bangalore. Dr. M. Ravindra obtained Ph.D from Uni. of Edinburgh,UK. Currently he is GD,ICG,ISAC,Bangalore

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
LAP LAMBERT Academic Publishing
Date d'édition
2013
Langue
anglais
ISBN 10 
3659336254
ISBN 13 
9783659336256
Reliure
Broché
Nombre de pages
200
Coordonnées du fabricant
non disponible
Personne responsable
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