The book has been written with the intention to satisfy the needs of the researchers and students devoted to the study of electron transport properties in the material GaN. An up-to-date account of the theoretical research results as done by the authors has been incorporated in the book. It is the strong belief of the authors that the present book will be useful to all the electronic device physicists and engineers interested in the transport characteristics and applications of GaN and thus will pave the path for future research in this field.
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Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The book has been written with the intention to satisfy the needs of the researchers and students devoted to the study of electron transport properties in the material GaN. An up-to-date account of the theoretical research results as done by the authors has been incorporated in the book. It is the strong belief of the authors that the present book will be useful to all the electronic device physicists and engineers interested in the transport characteristics and applications of GaN and thus will pave the path for future research in this field. 100 pp. Englisch. N° de réf. du vendeur 9783659338502
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Vendeur : moluna, Greven, Allemagne
Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Biswas ArindamArinda Biswas,M.Tech(IRPEL, CU), PhD(Persuing, NIT DgP)Associate Professor,Dept of ECE,Dumkal Institute of Engineering and Technology,WBUT,Publication : Near about 40 Nos.Prof(Dr.)Aniruddha GhosalBsc, B.Tech, M.Tech, Ph. N° de réf. du vendeur 5149559
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Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The book has been written with the intention to satisfy the needs of the researchers and students devoted to the study of electron transport properties in the material GaN. An up-to-date account of the theoretical research results as done by the authors has been incorporated in the book. It is the strong belief of the authors that the present book will be useful to all the electronic device physicists and engineers interested in the transport characteristics and applications of GaN and thus will pave the path for future research in this field. N° de réf. du vendeur 9783659338502
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Vendeur : Mispah books, Redhill, SURRE, Royaume-Uni
Paperback. Etat : Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book. N° de réf. du vendeur ERICA79636593385086
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Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -The book has been written with the intention to satisfy the needs of the researchers and students devoted to the study of electron transport properties in the material GaN. An up-to-date account of the theoretical research results as done by the authors has been incorporated in the book. It is the strong belief of the authors that the present book will be useful to all the electronic device physicists and engineers interested in the transport characteristics and applications of GaN and thus will pave the path for future research in this field.OmniScriptum SRL, Str. Armeneasca 28/1, office 1, 2012 Chisinau 100 pp. Englisch. N° de réf. du vendeur 9783659338502
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Vendeur : preigu, Osnabrück, Allemagne
Taschenbuch. Etat : Neu. Theoretical Study of Electron Transport Characteristics in GaN | Boltzmann transport equation (BTE), High field transport theory, Velocity Overshoot, Monte-carlo simulation | Arindam Biswas (u. a.) | Taschenbuch | 100 S. | Englisch | 2013 | LAP LAMBERT Academic Publishing | EAN 9783659338502 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. N° de réf. du vendeur 106065299
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