Articles liés à III-Nitride Optoelectronic Materials and Devices: Characteri...

III-Nitride Optoelectronic Materials and Devices: Characterization, Metal-semiconductor- metal Photodetectors MSM PD, Solar cells, and Multi-Quantum well laser diodes LDs - Couverture souple

Jabbar Ghazai, Alaa; Abo Hassan, Haslan; Hassan, Z.

 
9783659351051: III-Nitride Optoelectronic Materials and Devices: Characterization, Metal-semiconductor- metal Photodetectors MSM PD, Solar cells, and Multi-Quantum well laser diodes LDs
Couverture souple
ISBN 10 : 3659351059 ISBN 13 : 9783659351051
Editeur : LAP LAMBERT Academic Publishing, 2013

Synopsis

The objective of this book is to characterize the optoelectronic properties of quaternary n-Al0.08In0.08Ga0.84N thin films grown via plasma assistance molecular beam epitaxy on sapphire (Al2O3) and silicon (Si) substrates for different optoelectronic applications, including Al0.08In0.08Ga0.84N (MSM) photodetectors (PDs), solar cells and multi-quantum well (MQW) laser diodes (LDs). Defect-free films with high structural, optical and electrical qualities were obtained. X-ray diffraction analysis was used to characterize small full width at half maximum intensity of diffraction peaks, low compressive strain, relatively large grain size and low dislocation density which produced smooth surfaces without any phases separation or cracks. Scanning electron microscopy, energy-dispersive X-ray microscopy and atomic force microscopy images confirmed these characterizations. Furthermore, high optical quality, as well as high absorption and absorption coefficients were observed using PL and UV-VIS spectroscopy. Finally, the simulation of Al0.08In0.08Ga0.84N MQW LD using ISE TCAD software was designed and optimized. The best performance of the LDs was achieved at a quantum well number of 4.

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

Présentation de l'éditeur

The objective of this book is to characterize the optoelectronic properties of quaternary n-Al0.08In0.08Ga0.84N thin films grown via plasma assistance molecular beam epitaxy on sapphire (Al2O3) and silicon (Si) substrates for different optoelectronic applications, including Al0.08In0.08Ga0.84N (MSM) photodetectors (PDs), solar cells and multi-quantum well (MQW) laser diodes (LDs). Defect-free films with high structural, optical and electrical qualities were obtained. X-ray diffraction analysis was used to characterize small full width at half maximum intensity of diffraction peaks, low compressive strain, relatively large grain size and low dislocation density which produced smooth surfaces without any phases separation or cracks. Scanning electron microscopy, energy-dispersive X-ray microscopy and atomic force microscopy images confirmed these characterizations. Furthermore, high optical quality, as well as high absorption and absorption coefficients were observed using PL and UV-VIS spectroscopy. Finally, the simulation of Al0.08In0.08Ga0.84N MQW LD using ISE TCAD software was designed and optimized. The best performance of the LDs was achieved at a quantum well number of 4.

Biographie de l'auteur

Author was born in Baghdad 1974.He graduated in 1998,then completed his Master degree in 2001 from Al-Mustansiriyah University. Earning doctorate in solid state physics in 2012 from University Sains Malaysia (USM).He works as a lecturer at Physics department,Science College,Thi Qar University since 2004 and so far. He is married and has 3 children.

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
LAP LAMBERT Academic Publishing
Date d'édition
2013
Langue
anglais
ISBN 10 
3659351059
ISBN 13 
9783659351051
Reliure
Broché
Nombre de pages
212
Coordonnées du fabricant
non disponible
Personne responsable
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