Relativistic Study of Electronic Properties of One-dimensional Systems: Impurity States, Resonant Tunneling and Landauer Resistance of Thue-Morse Lattices - Couverture souple
Synopsis
The main purpose of this book is to elucidate the relativistic effects on electronic properties of one-dimensional systems. In this context the authors first discuss in depth about Dirac Equation in one dimension, the properties of nonrelativistic and relativistic transfer matrix and scattering matrix. Based on these two well-known mathematical techniques, the author then develop a complete relativistic theory of impurity sates, resonant tunneling, and Landauer resistance – all of them usually play a vital role in the electron transport of any electronic devices. The technological implication of the results reported in this book is that one can engineer, rather simply, the fabrication of high-speed solid-state devices by considering a heterojunction semiconductor superlattice with some optimum values of device parameters. As it covers important basic theoretical aspects of electronic properties with practical implications to electronic devices like resonant tunneling diodes, this book will be of great value to the students as well as to the researchers working in the area of condensed matter physics and device engineering.
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Relativistic Study of Electronic Properties of One-dimensional Systems
Edité par
LAP LAMBERT Academic Publishing Jul 2013, 2013
ISBN 10 : 3659385999
ISBN 13 : 9783659385995
Neuf
Taschenbuch
Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The main purpose of this book is to elucidate the relativistic effects on electronic properties of one-dimensional systems. In this context the authors first discuss in depth about Dirac Equation in one dimension, the properties of nonrelativistic and relativistic transfer matrix and scattering matrix. Based on these two well-known mathematical techniques, the author then develop a complete relativistic theory of impurity sates, resonant tunneling, and Landauer resistance all of them usually play a vital role in the electron transport of any electronic devices. The technological implication of the results reported in this book is that one can engineer, rather simply, the fabrication of high-speed solid-state devices by considering a heterojunction semiconductor superlattice with some optimum values of device parameters. As it covers important basic theoretical aspects of electronic properties with practical implications to electronic devices like resonant tunneling diodes, this book will be of great value to the students as well as to the researchers working in the area of condensed matter physics and device engineering. 164 pp. Englisch. N° de réf. du vendeur 9783659385995
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Relativistic Study of Electronic Properties of One-dimensional Systems
Edité par
LAP LAMBERT Academic Publishing, 2013
ISBN 10 : 3659385999
ISBN 13 : 9783659385995
Neuf
Couverture souple
Vendeur : moluna, Greven, Allemagne
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Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Khan ArifArif Khan is working as a Scientist, Electrocom Corporation, Potomac, Maryland, USA and he is also associated with Department of Physics, NITMAS, Kolkata, India as an Associate Professor. Chunilal Roy was Professor, Departme. N° de réf. du vendeur 5152786
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Relativistic Study of Electronic Properties of One-dimensional Systems
Edité par
LAP LAMBERT Academic Publishing Jul 2013, 2013
ISBN 10 : 3659385999
ISBN 13 : 9783659385995
Neuf
Taschenbuch
Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -The main purpose of this book is to elucidate the relativistic effects on electronic properties of one-dimensional systems. In this context the authors first discuss in depth about Dirac Equation in one dimension, the properties of nonrelativistic and relativistic transfer matrix and scattering matrix. Based on these two well-known mathematical techniques, the author then develop a complete relativistic theory of impurity sates, resonant tunneling, and Landauer resistance - all of them usually play a vital role in the electron transport of any electronic devices. The technological implication of the results reported in this book is that one can engineer, rather simply, the fabrication of high-speed solid-state devices by considering a heterojunction semiconductor superlattice with some optimum values of device parameters. As it covers important basic theoretical aspects of electronic properties with practical implications to electronic devices like resonant tunneling diodes, this book will be of great value to the students as well as to the researchers working in the area of condensed matter physics and device engineering.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 164 pp. Englisch. N° de réf. du vendeur 9783659385995
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Relativistic Study of Electronic Properties of One-dimensional Systems : Impurity States, Resonant Tunneling and Landauer Resistance of Thue-Morse Lattices
Edité par
LAP LAMBERT Academic Publishing, 2013
ISBN 10 : 3659385999
ISBN 13 : 9783659385995
Neuf
Taschenbuch
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The main purpose of this book is to elucidate the relativistic effects on electronic properties of one-dimensional systems. In this context the authors first discuss in depth about Dirac Equation in one dimension, the properties of nonrelativistic and relativistic transfer matrix and scattering matrix. Based on these two well-known mathematical techniques, the author then develop a complete relativistic theory of impurity sates, resonant tunneling, and Landauer resistance all of them usually play a vital role in the electron transport of any electronic devices. The technological implication of the results reported in this book is that one can engineer, rather simply, the fabrication of high-speed solid-state devices by considering a heterojunction semiconductor superlattice with some optimum values of device parameters. As it covers important basic theoretical aspects of electronic properties with practical implications to electronic devices like resonant tunneling diodes, this book will be of great value to the students as well as to the researchers working in the area of condensed matter physics and device engineering. N° de réf. du vendeur 9783659385995
Acheter neuf
EUR 41,90
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Relativistic Study of Electronic Properties of One-dimensional Systems | Impurity States, Resonant Tunneling and Landauer Resistance of Thue-Morse Lattices
Edité par
LAP LAMBERT Academic Publishing, 2013
ISBN 10 : 3659385999
ISBN 13 : 9783659385995
Neuf
Taschenbuch
Vendeur : preigu, Osnabrück, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. Relativistic Study of Electronic Properties of One-dimensional Systems | Impurity States, Resonant Tunneling and Landauer Resistance of Thue-Morse Lattices | Arif Khan (u. a.) | Taschenbuch | 164 S. | Englisch | 2013 | LAP LAMBERT Academic Publishing | EAN 9783659385995 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu. N° de réf. du vendeur 105740170
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Relativistic Study of Electronic Properties of One-dimensional Systems: Impurity States, Resonant Tunneling and Landauer Resistance of Thue-Morse Lattices
Edité par
LAP LAMBERT Academic Publishing, 2013
ISBN 10 : 3659385999
ISBN 13 : 9783659385995
Ancien ou d'occasion
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Vendeur : Mispah books, Redhill, SURRE, Royaume-Uni
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Paperback. Etat : Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book. N° de réf. du vendeur ERICA79636593859996
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