An SOI LDMOS For Better Switch Application: Electron Devices - Couverture souple

Biswas, Arindam; Rafique, Arzoo; Bhattacharjee, Anup Kumar

 
9783659406751: An SOI LDMOS For Better Switch Application: Electron Devices
Couverture souple
ISBN 10 : 3659406759 ISBN 13 : 9783659406751
Editeur : LAP LAMBERT Academic Publishing, 2013

Présentation de l'éditeur

This book is proposed to develop an SOI (Silicon on Insulator) LDMOS in which a drift region of 1-m is added to a conventional n-MOS and compare them on various aspects. The drift region utilizes the RESURF effect that is utilized to distribute the electric field into the LDD region. It is found using two dimensional simulations that the addition of a drift region of 1-m in LDMOS improves the performance of the device in terms of breakdown-voltage and switching-speed over the conventional MOSFET.

Biographie de l'auteur

Arindam BiswasB.Tech, M.Tech (CU), PhD Submitted (NIT Dgp)Research Interests:Electron Transport, Non Linear Optics, Electron Devices.Publication: Journals and Conferences- 40 Book: 2

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Éditeur
LAP LAMBERT Academic Publishing
Date d'édition
2013
Langue
anglais
ISBN 10 
3659406759
ISBN 13 
9783659406751
Reliure
Broché
Nombre de pages
84
Coordonnées du fabricant
non disponible
Personne responsable
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