Surface potential of Dual Material Gate MOSFET with high-k dielectrics: Short Channel Effects in MOSFET - Couverture souple

De, Swapnadip

 
9783659421228: Surface potential of Dual Material Gate MOSFET with high-k dielectrics: Short Channel Effects in MOSFET
Couverture souple
ISBN 10 : 3659421227 ISBN 13 : 9783659421228
Editeur : LAP LAMBERT Academic Publishing, 2013

Synopsis

The shrinking of device dimension leads to reduction of gate oxide thickness. As a result of this the undesirable hot electron effect and the gate tunneling current is increased. In order to overcome this drawback high-k materials are used instead of silicon dioxide as the insulating material underneath the gate. High-k dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric.Among various high-k materials, Hafnium oxide (HfO2), Tantalum pent oxide (Ta2O5) these materials appear to be the candidates for replacing silicon oxide. These high-k dielectrics exhibit a trend of decreasing barrier height with increasing dielectric constant.The high-k materials with far higher permittivity create same gate capacitance for thicker dielectric. In this book the main focus has been on the modeling and the influence of depletion layers around the source and the drain regions on the sub threshold surface potential of a short-channel DMG MOS transistor with a uniformly-doped channel.

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

Présentation de l'éditeur

The shrinking of device dimension leads to reduction of gate oxide thickness. As a result of this the undesirable hot electron effect and the gate tunneling current is increased. In order to overcome this drawback high-k materials are used instead of silicon dioxide as the insulating material underneath the gate. High-k dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric.Among various high-k materials, Hafnium oxide (HfO2), Tantalum pent oxide (Ta2O5) these materials appear to be the candidates for replacing silicon oxide. These high-k dielectrics exhibit a trend of decreasing barrier height with increasing dielectric constant.The high-k materials with far higher permittivity create same gate capacitance for thicker dielectric. In this book the main focus has been on the modeling and the influence of depletion layers around the source and the drain regions on the sub threshold surface potential of a short-channel DMG MOS transistor with a uniformly-doped channel.

Biographie de l'auteur

Swapnadip De graduated in Radio physics and Electronics from the University of Calcutta. He obtained his M.Tech degree in VLSI & Microelectronics from Jadavpur University. He submitted his PhD thesis from Jadavpur University in December 2012.He is presently working in Meghnad Saha Institute of Technology as Assistant Professor in ECE Department.

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
LAP LAMBERT Academic Publishing
Date d'édition
2013
Langue
anglais
ISBN 10 
3659421227
ISBN 13 
9783659421228
Reliure
Broché
Nombre de pages
64
Coordonnées du fabricant
non disponible
Personne responsable
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