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Synopsis
Traditional semiconductor device characterization techniques based on capacitance measurements using a small test signal, the different modifications of deep level transient spectroscopy etc. are limited if devices contain a large density of deep traps, exhibiting enhanced generation currents. In this book, a pulsed capacitance technique for barrier evaluation by linearly increasing voltage (BELIV) is presented. The basics of analysis of the current transients for reverse and forward biased junctions are described. The measurement schemes and regimes for profiling of dopant distribution, for thermo-emission and photo-ionization spectroscopy of traps, for the in situ control of radiation damage of particle detectors are discussed. Applications of this BELIV technique for characterization of multi-layered structures of homo- and hetero- junctions formed in fabrication of diode, particle detector, thyristor and solar-cell devices are demonstrated. The BELIV technique is shown to be a powerful tool for fast and comprehensive evaluation of the parameters of barrier structures.
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Pulsed capacitance technique for evaluation of barrier structures
Edité par
LAP LAMBERT Academic Publishing Dez 2013, 2013
ISBN 10 : 3659505188
ISBN 13 : 9783659505188
Neuf
Taschenbuch
Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Traditional semiconductor device characterization techniques based on capacitance measurements using a small test signal, the different modifications of deep level transient spectroscopy etc. are limited if devices contain a large density of deep traps, exhibiting enhanced generation currents. In this book, a pulsed capacitance technique for barrier evaluation by linearly increasing voltage (BELIV) is presented. The basics of analysis of the current transients for reverse and forward biased junctions are described. The measurement schemes and regimes for profiling of dopant distribution, for thermo-emission and photo-ionization spectroscopy of traps, for the in situ control of radiation damage of particle detectors are discussed. Applications of this BELIV technique for characterization of multi-layered structures of homo- and hetero- junctions formed in fabrication of diode, particle detector, thyristor and solar-cell devices are demonstrated. The BELIV technique is shown to be a powerful tool for fast and comprehensive evaluation of the parameters of barrier structures. 84 pp. Englisch. N° de réf. du vendeur 9783659505188
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Pulsed capacitance technique for evaluation of barrier structures
Edité par
LAP LAMBERT Academic Publishing, 2013
ISBN 10 : 3659505188
ISBN 13 : 9783659505188
Neuf
Couverture souple
Vendeur : moluna, Greven, Allemagne
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Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Gaubas EugenijusEugenijus Gaubas, habil. dr., professor of Vilnius University, head of department at Institute of Applied Research, Vilnius University, Lithuania.Tomas Ceponis, dr., senior researcher at Institute of Applied Research,. N° de réf. du vendeur 5160774
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Pulsed capacitance technique for evaluation of barrier structures
Edité par
LAP LAMBERT Academic Publishing Dez 2013, 2013
ISBN 10 : 3659505188
ISBN 13 : 9783659505188
Neuf
Taschenbuch
Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -Traditional semiconductor device characterization techniques based on capacitance measurements using a small test signal, the different modifications of deep level transient spectroscopy etc. are limited if devices contain a large density of deep traps, exhibiting enhanced generation currents. In this book, a pulsed capacitance technique for barrier evaluation by linearly increasing voltage (BELIV) is presented. The basics of analysis of the current transients for reverse and forward biased junctions are described. The measurement schemes and regimes for profiling of dopant distribution, for thermo-emission and photo-ionization spectroscopy of traps, for the in situ control of radiation damage of particle detectors are discussed. Applications of this BELIV technique for characterization of multi-layered structures of homo- and hetero- junctions formed in fabrication of diode, particle detector, thyristor and solar-cell devices are demonstrated. The BELIV technique is shown to be a powerful tool for fast and comprehensive evaluation of the parameters of barrier structures.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 84 pp. Englisch. N° de réf. du vendeur 9783659505188
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Pulsed capacitance technique for evaluation of barrier structures
Edité par
LAP LAMBERT Academic Publishing, 2013
ISBN 10 : 3659505188
ISBN 13 : 9783659505188
Neuf
Taschenbuch
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Traditional semiconductor device characterization techniques based on capacitance measurements using a small test signal, the different modifications of deep level transient spectroscopy etc. are limited if devices contain a large density of deep traps, exhibiting enhanced generation currents. In this book, a pulsed capacitance technique for barrier evaluation by linearly increasing voltage (BELIV) is presented. The basics of analysis of the current transients for reverse and forward biased junctions are described. The measurement schemes and regimes for profiling of dopant distribution, for thermo-emission and photo-ionization spectroscopy of traps, for the in situ control of radiation damage of particle detectors are discussed. Applications of this BELIV technique for characterization of multi-layered structures of homo- and hetero- junctions formed in fabrication of diode, particle detector, thyristor and solar-cell devices are demonstrated. The BELIV technique is shown to be a powerful tool for fast and comprehensive evaluation of the parameters of barrier structures. N° de réf. du vendeur 9783659505188
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Pulsed capacitance technique for evaluation of barrier structures
Edité par
LAP LAMBERT Academic Publishing, 2013
ISBN 10 : 3659505188
ISBN 13 : 9783659505188
Neuf
Taschenbuch
Vendeur : preigu, Osnabrück, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. Pulsed capacitance technique for evaluation of barrier structures | Eugenijus Gaubas (u. a.) | Taschenbuch | 84 S. | Englisch | 2013 | LAP LAMBERT Academic Publishing | EAN 9783659505188 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. N° de réf. du vendeur 105539165
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