Design Optimization of Ge-on-Si Photodetector: Performance Analysis of Ge Based Schottky Photodetector - Couverture souple

Dutta, Himadri Sekhar

 
9783659513886: Design Optimization of Ge-on-Si Photodetector: Performance Analysis of Ge Based Schottky Photodetector
Couverture souple
ISBN 10 : 3659513881 ISBN 13 : 9783659513886
Editeur : LAP LAMBERT Academic Publishing, 2014

Synopsis

In recent years,extensive researches are going on high-speed low-noise photodetectors for optical communication. A photodetector plays a critical role in the overall performance of the system. III-V based photodetectors for high-performance communication system have already been reported.But,the technology is very expensive.Si is an obvious choice in such cases.Si technology has also the advantage of high reliability and high integrability. However, Si band-gap is not suitable for photodetection around the long-haul communication wavelength.Ge is a good candidate for designing such photodetectors(PD),given its smaller direct energy band-gap,and compatibility with Si. Si and Ge can also be combined to design PD at variable wavelengths.Here a physics based model is developed and then solved analytically or numerically by the appropriate initial and boundary conditions. The simulated results are then be verified with experimental data. The various performance of the PD are studied here. Finally the design optimization are carried out by choosing an appropriate objective function.This book is very much useful for Ph.D, M.Tech and B.Tech students of ECE branch.

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Présentation de l'éditeur

In recent years,extensive researches are going on high-speed low-noise photodetectors for optical communication. A photodetector plays a critical role in the overall performance of the system. III-V based photodetectors for high-performance communication system have already been reported.But,the technology is very expensive.Si is an obvious choice in such cases.Si technology has also the advantage of high reliability and high integrability. However, Si band-gap is not suitable for photodetection around the long-haul communication wavelength.Ge is a good candidate for designing such photodetectors(PD),given its smaller direct energy band-gap,and compatibility with Si. Si and Ge can also be combined to design PD at variable wavelengths.Here a physics based model is developed and then solved analytically or numerically by the appropriate initial and boundary conditions. The simulated results are then be verified with experimental data. The various performance of the PD are studied here. Finally the design optimization are carried out by choosing an appropriate objective function.This book is very much useful for Ph.D, M.Tech and B.Tech students of ECE branch.

Biographie de l'auteur

Dr.Dutta received PhD in Technology from University of Calcutta,India. He is now the Assiatant Professor of Kalyani Govt. Engg. College,India and vice-chair of IEEE Gold Affinity Group, also Treasurer of IEEE Photonics Society,Calcutta Section. He has twelve years of Teaching experience and published more than thirty international research papers.

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
LAP LAMBERT Academic Publishing
Date d'édition
2014
Langue
anglais
ISBN 10 
3659513881
ISBN 13 
9783659513886
Reliure
Broché
Nombre de pages
140
Coordonnées du fabricant
non disponible
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