NQS Effects Investigation For Compact Bipolar Transistor Modeling: Analyzing Physics of High Speed Devices - Couverture souple

Bhattacharyya, Arkaprava

9783659533143: NQS Effects Investigation For Compact Bipolar Transistor Modeling: Analyzing Physics of High Speed Devices

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ISBN 10 : 3659533149 ISBN 13 : 9783659533143

Editeur : LAP LAMBERT Academic Publishing, 2014

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Modern high speed (RF) transistors encounter certain delay while operated at high frequency or under fast transient condition. This effect is named as Non Quasi Static (NQS) effect. In this work, NQS effect is analyzed in a concise manner so that it can be readily implemented in a compact model using the VerilogA description language. The basic physics behind this effect is investigated in small signal domain and results are compared with the published work. Compact modeling with HICUM model is performed with both measured and device simulated data. At last, an improved excess phase circuit is proposed to model the NQS effect.

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Biographie de l'auteur

Dr. Arkaprava Bhattacharyya earned his PhD in Microelectronics from University of Bordeaux1. His research interest includes physics and compact modeling of high speed devices.

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�diteurLAP LAMBERT Academic Publishing
Date d'�dition2014
ISBN 10 3659533149
ISBN 13 9783659533143
ReliureBroch�
Langueanglais
Nombre de pages156
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NQS Effects Investigation For Compact Bipolar Transistor Modeling

Arkaprava Bhattacharyya

Edit� par LAP LAMBERT Academic Publishing Apr 2014, 2014

ISBN 10 : 3659533149 ISBN 13 : 9783659533143

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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Modern high speed (RF) transistors encounter certain delay while operated at high frequency or under fast transient condition. This effect is named as Non Quasi Static (NQS) effect. In this work, NQS effect is analyzed in a concise manner so that it can be readily implemented in a compact model using the VerilogA description language. The basic physics behind this effect is investigated in small signal domain and results are compared with the published work. Compact modeling with HICUM model is performed with both measured and device simulated data. At last, an improved excess phase circuit is proposed to model the NQS effect. 156 pp. Englisch. N� de r�f. du vendeur 9783659533143

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NQS Effects Investigation For Compact Bipolar Transistor Modeling

Arkaprava Bhattacharyya

Edit� par LAP LAMBERT Academic Publishing Apr 2014, 2014

ISBN 10 : 3659533149 ISBN 13 : 9783659533143

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Taschenbuch. Etat : Neu. Neuware -Modern high speed (RF) transistors encounter certain delay while operated at high frequency or under fast transient condition. This effect is named as Non Quasi Static (NQS) effect. In this work, NQS effect is analyzed in a concise manner so that it can be readily implemented in a compact model using the VerilogA description language. The basic physics behind this effect is investigated in small signal domain and results are compared with the published work. Compact modeling with HICUM model is performed with both measured and device simulated data. At last, an improved excess phase circuit is proposed to model the NQS effect.Books on Demand GmbH, �berseering 33, 22297 Hamburg 156 pp. Englisch. N� de r�f. du vendeur 9783659533143

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NQS Effects Investigation For Compact Bipolar Transistor Modeling : Analyzing Physics of High Speed Devices

Arkaprava Bhattacharyya

Edit� par LAP LAMBERT Academic Publishing, 2014

ISBN 10 : 3659533149 ISBN 13 : 9783659533143

Neuf Taschenbuch

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Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne

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Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Modern high speed (RF) transistors encounter certain delay while operated at high frequency or under fast transient condition. This effect is named as Non Quasi Static (NQS) effect. In this work, NQS effect is analyzed in a concise manner so that it can be readily implemented in a compact model using the VerilogA description language. The basic physics behind this effect is investigated in small signal domain and results are compared with the published work. Compact modeling with HICUM model is performed with both measured and device simulated data. At last, an improved excess phase circuit is proposed to model the NQS effect. N� de r�f. du vendeur 9783659533143

Contacter le vendeur