GaN-based Semiconductor Devices: Theoretical Study of the Electronic and Optoelectronic Characterization - Couverture souple

Rabbaa, Sulaiman; Shkerdin, Gennady; Stiens, Johan

 
9783659557811: GaN-based Semiconductor Devices: Theoretical Study of the Electronic and Optoelectronic Characterization
Couverture souple
ISBN 10 : 3659557811 ISBN 13 : 9783659557811
Editeur : LAP LAMBERT Academic Publishing, 2014

Synopsis

Nitride-based materials still offer opportunities for the development of new electronic and optoelectronic applications. From the seventies of the 20th century, GaAs was considered as mature family material for many electronic applications. In the beginning of the 21th century, GaAs is step by step replaced by GaN in many applications due to its high polarization, chemical and physical stability, and wide bandgap. In this work we study theoretically the electronic and optoelectronic properties of GaN, and we conceive its applications. We test the triangular quantum well model for the high electron mobility transistors. We discuss the use of GaN-based HEMTs for the design of chemical and biological sensors. The plasmon frequencies of the 2DEG in the HEMT are calculated. Optoelectronic characterizations of AlGaN/GaN structures with GaAs-Au grating are discussed using full vector diffraction software. In the context of the optical properties of GaN, we calculate the free-carrier absorption coefficient with strong longitudinal-optical (LO) phonon-plasmon interaction. We take several mechanisms into account, which assist in the photon absorption process.

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

Présentation de l'éditeur

Nitride-based materials still offer opportunities for the development of new electronic and optoelectronic applications. From the seventies of the 20th century, GaAs was considered as mature family material for many electronic applications. In the beginning of the 21th century, GaAs is step by step replaced by GaN in many applications due to its high polarization, chemical and physical stability, and wide bandgap. In this work we study theoretically the electronic and optoelectronic properties of GaN, and we conceive its applications. We test the triangular quantum well model for the high electron mobility transistors. We discuss the use of GaN-based HEMTs for the design of chemical and biological sensors. The plasmon frequencies of the 2DEG in the HEMT are calculated. Optoelectronic characterizations of AlGaN/GaN structures with GaAs-Au grating are discussed using full vector diffraction software. In the context of the optical properties of GaN, we calculate the free-carrier absorption coefficient with strong longitudinal-optical (LO) phonon-plasmon interaction. We take several mechanisms into account, which assist in the photon absorption process.

Biographie de l'auteur

Sulaiman Rabbaa received B.Sc. in physics in 1989, and M.Sc. in solid state physics from the University of Jordan in 1991. He worked as a teacher, and then as Head of Educational Technologies. He had a lecturer position in Department of Physics in AAUJ from 2002 and still. He received PhD degree in Electronics and Informatics from VUB in 2013.

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
LAP LAMBERT Academic Publishing
Date d'édition
2014
Langue
anglais
ISBN 10 
3659557811
ISBN 13 
9783659557811
Reliure
Broché
Nombre de pages
212
Coordonnées du fabricant
non disponible
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