The II – VI semiconductors, such as Zinc Sulphide (ZnS) have attracted growing interest owing to their possible application in electro-optic device, it is important semiconductor material for the development of various modern technologies of solid – state devices. Zinc Sulphide have wide direct band gap of about (3.50 -4.1) eV in the UV region; it is used as a key material for blue light emitting diodes and other optoelectronic devices such as cathodluminescent displays , multilayer dielectric filters, electroluminescent displays and multilayer dielectric filters. Zinc Sulpide is highly studied as a window layer in hetrojunction photovoltaic solar cells because the wide band decreases the window absorption loss and improve the short circuit current of the cell. In the area of optics ZnS can be used as reflector, because of it's high visible range. There have been various studies on the bulk and thin film characteristics of ZnS including optical and electrical properties. Zinc sulfide has two types of crystal structures; hexagonal wurtzite and cubic zinc blende, it has a cubic crystal structure in its most stable state.
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The II – VI semiconductors, such as Zinc Sulphide (ZnS) have attracted growing interest owing to their possible application in electro-optic device, it is important semiconductor material for the development of various modern technologies of solid – state devices. Zinc Sulphide have wide direct band gap of about (3.50 -4.1) eV in the UV region; it is used as a key material for blue light emitting diodes and other optoelectronic devices such as cathodluminescent displays , multilayer dielectric filters, electroluminescent displays and multilayer dielectric filters. Zinc Sulpide is highly studied as a window layer in hetrojunction photovoltaic solar cells because the wide band decreases the window absorption loss and improve the short circuit current of the cell. In the area of optics ZnS can be used as reflector, because of it's high visible range. There have been various studies on the bulk and thin film characteristics of ZnS including optical and electrical properties. Zinc sulfide has two types of crystal structures; hexagonal wurtzite and cubic zinc blende, it has a cubic crystal structure in its most stable state.
Dr. Hamza Bakr Salman has obtained his MSc. degree in radiation physics and PhD degree in solid state physics. Since then he has worked in different position in the College of Education for pure Science University of Basrah, IRAQ. He is the author of many related papers in solid state physics and radiation physics(Radon monitor).
Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.
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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The II - VI semiconductors, such as Zinc Sulphide (ZnS) have attracted growing interest owing to their possible application in electro-optic device, it is important semiconductor material for the development of various modern technologies of solid - state devices. Zinc Sulphide have wide direct band gap of about (3.50 -4.1) eV in the UV region; it is used as a key material for blue light emitting diodes and other optoelectronic devices such as cathodluminescent displays , multilayer dielectric filters, electroluminescent displays and multilayer dielectric filters. Zinc Sulpide is highly studied as a window layer in hetrojunction photovoltaic solar cells because the wide band decreases the window absorption loss and improve the short circuit current of the cell. In the area of optics ZnS can be used as reflector, because of it's high visible range. There have been various studies on the bulk and thin film characteristics of ZnS including optical and electrical properties. Zinc sulfide has two types of crystal structures; hexagonal wurtzite and cubic zinc blende, it has a cubic crystal structure in its most stable state. 64 pp. Englisch. N° de réf. du vendeur 9783659581717
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Etat : New. Print on Demand pp. 64 2:B&W 6 x 9 in or 229 x 152 mm Perfect Bound on Creme w/Gloss Lam. N° de réf. du vendeur 353444652
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Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Bakr HamzaDr. Hamza Bakr Salman has obtained his MSc. degree in radiation physics and PhD degree in solid state physics. Since then he has worked in different position in the College of Education for pure Science University of Basra. N° de réf. du vendeur 5166371
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Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -The II - VI semiconductors, such as Zinc Sulphide (ZnS) have attracted growing interest owing to their possible application in electro-optic device, it is important semiconductor material for the development of various modern technologies of solid - state devices. Zinc Sulphide have wide direct band gap of about (3.50 -4.1) eV in the UV region; it is used as a key material for blue light emitting diodes and other optoelectronic devices such as cathodluminescent displays , multilayer dielectric filters, electroluminescent displays and multilayer dielectric filters. Zinc Sulpide is highly studied as a window layer in hetrojunction photovoltaic solar cells because the wide band decreases the window absorption loss and improve the short circuit current of the cell. In the area of optics ZnS can be used as reflector, because of it's high visible range. There have been various studies on the bulk and thin film characteristics of ZnS including optical and electrical properties. Zinc sulfide has two types of crystal structures; hexagonal wurtzite and cubic zinc blende, it has a cubic crystal structure in its most stable state.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 64 pp. Englisch. N° de réf. du vendeur 9783659581717
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Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The II - VI semiconductors, such as Zinc Sulphide (ZnS) have attracted growing interest owing to their possible application in electro-optic device, it is important semiconductor material for the development of various modern technologies of solid - state devices. Zinc Sulphide have wide direct band gap of about (3.50 -4.1) eV in the UV region; it is used as a key material for blue light emitting diodes and other optoelectronic devices such as cathodluminescent displays , multilayer dielectric filters, electroluminescent displays and multilayer dielectric filters. Zinc Sulpide is highly studied as a window layer in hetrojunction photovoltaic solar cells because the wide band decreases the window absorption loss and improve the short circuit current of the cell. In the area of optics ZnS can be used as reflector, because of it's high visible range. There have been various studies on the bulk and thin film characteristics of ZnS including optical and electrical properties. Zinc sulfide has two types of crystal structures; hexagonal wurtzite and cubic zinc blende, it has a cubic crystal structure in its most stable state. N° de réf. du vendeur 9783659581717
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Taschenbuch. Etat : Neu. Structural and optical properties of ZnS thin films | Thin Films Physics | Hamza Bakr (u. a.) | Taschenbuch | 64 S. | Englisch | 2014 | LAP LAMBERT Academic Publishing | EAN 9783659581717 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu. N° de réf. du vendeur 105148866
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