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Role of Annealing on the Interface Engineering in Ge MOS devices: Role of Annealing on the Interface Engineering - Couverture souple
Synopsis
High permittivity dielectrics and suitable substrates are studies intensively in the view of their use in VLSI design. However, hafnium oxide (HfO2) is a promising candidate for the next generation of gate dielectrics due to its relatively high dielectric constant 25 , wide bandgap, good thermal stability, and relatively high free energy of reaction with the substrate material. Recently, Ge-based electronic devices have regained considerable attention and Ge can provide solutions to major problems that Si technology is facing for advanced CMOS devices; this is mainly due to the higher mo-bility of both the holes and the electrons in Ge substrate. Hence this book is useful for the readers to knew some significant issue on Ge technology for high frequency devices.
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Role of Annealing on the Interface Engineering in Ge MOS devices
Edité par
LAP LAMBERT Academic Publishing Jan 2017, 2017
ISBN 10 : 3659684856
ISBN 13 : 9783659684852
Neuf
Taschenbuch
Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -High permittivity dielectrics and suitable substrates are studies intensively in the view of their use in VLSI design. However, hafnium oxide (HfO2) is a promising candidate for the next generation of gate dielectrics due to its relatively high dielectric constant 25 , wide bandgap, good thermal stability, and relatively high free energy of reaction with the substrate material. Recently, Ge-based electronic devices have regained considerable attention and Ge can provide solutions to major problems that Si technology is facing for advanced CMOS devices; this is mainly due to the higher mo-bility of both the holes and the electrons in Ge substrate. Hence this book is useful for the readers to knew some significant issue on Ge technology for high frequency devices. 76 pp. Englisch. N° de réf. du vendeur 9783659684852
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Role of Annealing on the Interface Engineering in Ge MOS devices: Role of Annealing on the Interface Engineering
Edité par
LAP LAMBERT Academic Publishing, 2017
ISBN 10 : 3659684856
ISBN 13 : 9783659684852
Neuf
Paperback
Vendeur : Revaluation Books, Exeter, Royaume-Uni
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Paperback. Etat : Brand New. 76 pages. 8.66x5.91x0.18 inches. In Stock. N° de réf. du vendeur 3659684856
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Role of Annealing on the Interface Engineering in Ge MOS devices
Edité par
LAP LAMBERT Academic Publishing, 2017
ISBN 10 : 3659684856
ISBN 13 : 9783659684852
Neuf
Couverture souple
Vendeur : moluna, Greven, Allemagne
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Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: T. V. RajeshT.V.Rajesh, Deakin University, Australia. He published two International papers. Dr.S.V.Jagadeesh Chandra, Professor of LBRCE, Mylavaram. He published 1 book and 35 scientific articles in referred journals. Dr. CH.V.V.Ram. N° de réf. du vendeur 159143660
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Role of Annealing on the Interface Engineering in Ge MOS devices
Edité par
LAP LAMBERT Academic Publishing Jan 2017, 2017
ISBN 10 : 3659684856
ISBN 13 : 9783659684852
Neuf
Taschenbuch
Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -High permittivity dielectrics and suitable substrates are studies intensively in the view of their use in VLSI design. However, hafnium oxide (HfO2) is a promising candidate for the next generation of gate dielectrics due to its relatively high dielectric constant 25 , wide bandgap, good thermal stability, and relatively high free energy of reaction with the substrate material. Recently, Ge-based electronic devices have regained considerable attention and Ge can provide solutions to major problems that Si technology is facing for advanced CMOS devices; this is mainly due to the higher mo-bility of both the holes and the electrons in Ge substrate. Hence this book is useful for the readers to knew some significant issue on Ge technology for high frequency devices.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 76 pp. Englisch. N° de réf. du vendeur 9783659684852
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Role of Annealing on the Interface Engineering in Ge MOS devices : Role of Annealing on the Interface Engineering
Edité par
LAP LAMBERT Academic Publishing, 2017
ISBN 10 : 3659684856
ISBN 13 : 9783659684852
Neuf
Taschenbuch
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - High permittivity dielectrics and suitable substrates are studies intensively in the view of their use in VLSI design. However, hafnium oxide (HfO2) is a promising candidate for the next generation of gate dielectrics due to its relatively high dielectric constant 25 , wide bandgap, good thermal stability, and relatively high free energy of reaction with the substrate material. Recently, Ge-based electronic devices have regained considerable attention and Ge can provide solutions to major problems that Si technology is facing for advanced CMOS devices; this is mainly due to the higher mo-bility of both the holes and the electrons in Ge substrate. Hence this book is useful for the readers to knew some significant issue on Ge technology for high frequency devices. N° de réf. du vendeur 9783659684852
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Role of Annealing on the Interface Engineering in Ge MOS devices | Role of Annealing on the Interface Engineering
Edité par
LAP LAMBERT Academic Publishing, 2017
ISBN 10 : 3659684856
ISBN 13 : 9783659684852
Neuf
Taschenbuch
Vendeur : preigu, Osnabrück, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. Role of Annealing on the Interface Engineering in Ge MOS devices | Role of Annealing on the Interface Engineering | Rajesh T. V. (u. a.) | Taschenbuch | 76 S. | Englisch | 2017 | LAP LAMBERT Academic Publishing | EAN 9783659684852 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. N° de réf. du vendeur 108308730
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