Investigations on Magnetron Sputtered Titanium based Oxide Films: For Microelectronic Devices - Couverture souple

Musalikunta, Chandra Sekhar ; Suda, Uthanna

9783659874819: Investigations on Magnetron Sputtered Titanium based Oxide Films: For Microelectronic Devices

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ISBN 10 : 3659874817 ISBN 13 : 9783659874819

Editeur : LAP LAMBERT Academic Publishing, 2016

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The size reduction of Complementary Metal Oxide Semiconductor (CMOS) transistors requires replacement of conventional SiO2 layer with higher dielectric constant (k) material for gate dielectric, in order to reduce the gate leakage current and also to maximize gate capacitance. Among the many possible transition- metal oxide materials, titanium dioxide (TiO2) is a potential candidate because of its high energy band gap, refractive index and dielectric constant.

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�diteur: LAP LAMBERT Academic Publishing
Date d'�dition: 2016
Langue: anglais
ISBN 10: 3659874817
ISBN 13: 9783659874819
Reliure: Broch�
Nombre de pages: 180
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Investigations on Magnetron Sputtered Titanium based Oxide Films

Chandra Sekhar Musalikunta

Edit� par LAP LAMBERT Academic Publishing Mai 2016, 2016

ISBN 10 : 3659874817 ISBN 13 : 9783659874819

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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The size reduction of Complementary Metal Oxide Semiconductor (CMOS) transistors requires replacement of conventional SiO2 layer with higher dielectric constant (k) material for gate dielectric, in order to reduce the gate leakage current and also to maximize gate capacitance. Among the many possible transition- metal oxide materials, titanium dioxide (TiO2) is a potential candidate because of its high energy band gap, refractive index and dielectric constant. 180 pp. Englisch. N� de r�f. du vendeur 9783659874819

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Investigations on Magnetron Sputtered Titanium based Oxide Films

Chandra Sekhar Musalikunta|Uthanna Suda

Edit� par LAP LAMBERT Academic Publishing, 2016

ISBN 10 : 3659874817 ISBN 13 : 9783659874819

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Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Musalikunta Chandra SekharHe received the B.Sc. degree with First Class from Sri Venkateswara University, Tirupati, India in 2001 and the M.S. and Ph.D. degrees from the Sri Venkateswara University, Tirupati, in 2005 and 2012, respec. N� de r�f. du vendeur 159146790

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Investigations on Magnetron Sputtered Titanium based Oxide Films | For Microelectronic Devices

Chandra Sekhar Musalikunta (u. a.)

Edit� par LAP LAMBERT Academic Publishing, 2016

ISBN 10 : 3659874817 ISBN 13 : 9783659874819

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Investigations on Magnetron Sputtered Titanium based Oxide Films

Chandra Sekhar Musalikunta

Edit� par LAP LAMBERT Academic Publishing Mai 2016, 2016

ISBN 10 : 3659874817 ISBN 13 : 9783659874819

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Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -The size reduction of Complementary Metal Oxide Semiconductor (CMOS) transistors requires replacement of conventional SiO2 layer with higher dielectric constant (k) material for gate dielectric, in order to reduce the gate leakage current and also to maximize gate capacitance. Among the many possible transition- metal oxide materials, titanium dioxide (TiO2) is a potential candidate because of its high energy band gap, refractive index and dielectric constant.VDM Verlag, Dudweiler Landstra�e 99, 66123 Saarbr�cken 180 pp. Englisch. N� de r�f. du vendeur 9783659874819

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Investigations on Magnetron Sputtered Titanium based Oxide Films : For Microelectronic Devices

Chandra Sekhar Musalikunta

Edit� par LAP LAMBERT Academic Publishing, 2016

ISBN 10 : 3659874817 ISBN 13 : 9783659874819

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Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The size reduction of Complementary Metal Oxide Semiconductor (CMOS) transistors requires replacement of conventional SiO2 layer with higher dielectric constant (k) material for gate dielectric, in order to reduce the gate leakage current and also to maximize gate capacitance. Among the many possible transition- metal oxide materials, titanium dioxide (TiO2) is a potential candidate because of its high energy band gap, refractive index and dielectric constant. N� de r�f. du vendeur 9783659874819

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