Structural properties, dc electrical conductivity and switching phenomenon were studied for CdInGaSe4 quaternary defect chalcopyrite in thin film form. The obtained results showed that Dc. conductivity σDc. increases with increasing temperature for all thicknesses and there are two values of the activation energy ΔEσ indicating the presence of two conduction mechanisms. Switching phenomenon measurements for the investigated composition revealed that both dynamic and static I-V characteristic curves for thin film samples are typical for memory switch. The obtained results for the investigated compound support the thermal model.
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Structural properties, dc electrical conductivity and switching phenomenon were studied for CdInGaSe4 quaternary defect chalcopyrite in thin film form. The obtained results showed that Dc. conductivity σDc. increases with increasing temperature for all thicknesses and there are two values of the activation energy ΔEσ indicating the presence of two conduction mechanisms. Switching phenomenon measurements for the investigated composition revealed that both dynamic and static I-V characteristic curves for thin film samples are typical for memory switch. The obtained results for the investigated compound support the thermal model.
Dr.Amira Mohamed Hasanein ShakraThe author was born in Egypt on 19/8/1977.She graduated from physics department,Faculty of Education,Ain Shams university in 1999,she has got her M.Sc(Physics)2004 and Phd(Physics)2009.Scientific careers.Assistant lecture 2004 and Physics lecture2009 at Physics department,Faculty of Education,Ain Shams University.
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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Structural properties, dc electrical conductivity and switching phenomenon were studied for CdInGaSe4 quaternary defect chalcopyrite in thin film form. The obtained results showed that Dc. conductivity sDc. increases with increasing temperature for all thicknesses and there are two values of the activation energy DeltaEs indicating the presence of two conduction mechanisms. Switching phenomenon measurements for the investigated composition revealed that both dynamic and static I-V characteristic curves for thin film samples are typical for memory switch. The obtained results for the investigated compound support the thermal model. 56 pp. Englisch. N° de réf. du vendeur 9783659892608
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Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Mohamed Shakra AmiraDr.Amira Mohamed Hasanein ShakraThe author was born in Egypt on 19/8/1977.She graduated from physics department,Faculty of Education,Ain Shams university in 1999,she has got her M.Sc(Physics)2004 and Phd(Physics)2. N° de réf. du vendeur 158125086
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Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -Structural properties, dc electrical conductivity and switching phenomenon were studied for CdInGaSe4 quaternary defect chalcopyrite in thin film form. The obtained results showed that Dc. conductivity ¿Dc. increases with increasing temperature for all thicknesses and there are two values of the activation energy ¿E¿ indicating the presence of two conduction mechanisms. Switching phenomenon measurements for the investigated composition revealed that both dynamic and static I-V characteristic curves for thin film samples are typical for memory switch. The obtained results for the investigated compound support the thermal model.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 56 pp. Englisch. N° de réf. du vendeur 9783659892608
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Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Structural properties, dc electrical conductivity and switching phenomenon were studied for CdInGaSe4 quaternary defect chalcopyrite in thin film form. The obtained results showed that Dc. conductivity sDc. increases with increasing temperature for all thicknesses and there are two values of the activation energy DeltaEs indicating the presence of two conduction mechanisms. Switching phenomenon measurements for the investigated composition revealed that both dynamic and static I-V characteristic curves for thin film samples are typical for memory switch. The obtained results for the investigated compound support the thermal model. N° de réf. du vendeur 9783659892608
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Taschenbuch. Etat : Neu. Electrical and switching behavior of quaternary defect chalcopyrite | Amira Mohamed Shakra (u. a.) | Taschenbuch | 56 S. | Englisch | 2016 | LAP LAMBERT Academic Publishing | EAN 9783659892608 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. N° de réf. du vendeur 103708921
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