In order to deal with the active power utilization of high-performance digital designs, dynamic leakage control techniques are required to contribute considerable leakage power savings. As technology scales, sub threshold leakage currents grow exponentially and become an increasingly large component of total power dissipation. The main objective of this project is to reduce the sub-threshold leakage in a CMOS device by making use of sleep transistors and PMOS logic. A low resistance path is generated by using sleep transistors as keepers to drop down the sub-threshold leakage. This is achieved further by using PMOS logic between the pull-up network (PUN) and pull down network (PDN). A fast and efficient leakage reduction technique is put forward which mitigates the power dissipation in addition to the reduction of leakage current. The main objective of the work is to analyze power and delay at 130nm, 90nm, and 45nm technologies for a CMOS half and full adder as well as subtractor circuits using microwind tool.
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
Dr. Kalagadda Bikshalu received Ph.D from JNTUH, Hyderabad and M.Tech in Digital Electronics & Communication Systems and B.Tech in ECE from JNTU, Hyderabad. Presently he is working as Assistant professor in Dept. of ECE, KUCE&T, Kakatiya University, India .His interests are High K dielectrics, Signal and Image processing and Low power VLSI
Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.
Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In order to deal with the active power utilization of high-performance digital designs, dynamic leakage control techniques are required to contribute considerable leakage power savings. As technology scales, sub threshold leakage currents grow exponentially and become an increasingly large component of total power dissipation. The main objective of this project is to reduce the sub-threshold leakage in a CMOS device by making use of sleep transistors and PMOS logic. A low resistance path is generated by using sleep transistors as keepers to drop down the sub-threshold leakage. This is achieved further by using PMOS logic between the pull-up network (PUN) and pull down network (PDN). A fast and efficient leakage reduction technique is put forward which mitigates the power dissipation in addition to the reduction of leakage current. The main objective of the work is to analyze power and delay at 130nm, 90nm, and 45nm technologies for a CMOS half and full adder as well as subtractor circuits using microwind tool. 100 pp. Englisch. N° de réf. du vendeur 9783659899485
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Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - In order to deal with the active power utilization of high-performance digital designs, dynamic leakage control techniques are required to contribute considerable leakage power savings. As technology scales, sub threshold leakage currents grow exponentially and become an increasingly large component of total power dissipation. The main objective of this project is to reduce the sub-threshold leakage in a CMOS device by making use of sleep transistors and PMOS logic. A low resistance path is generated by using sleep transistors as keepers to drop down the sub-threshold leakage. This is achieved further by using PMOS logic between the pull-up network (PUN) and pull down network (PDN). A fast and efficient leakage reduction technique is put forward which mitigates the power dissipation in addition to the reduction of leakage current. The main objective of the work is to analyze power and delay at 130nm, 90nm, and 45nm technologies for a CMOS half and full adder as well as subtractor circuits using microwind tool. N° de réf. du vendeur 9783659899485
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Vendeur : moluna, Greven, Allemagne
Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Bikshalu KalagaddaDr. Kalagadda Bikshalu received Ph.D from JNTUH, Hyderabad and M.Tech in Digital Electronics & Communication Systems and B.Tech in ECE from JNTU, Hyderabad. Presently he is working as Assistant professor in Dept. N° de réf. du vendeur 158125143
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Vendeur : Revaluation Books, Exeter, Royaume-Uni
Paperback. Etat : Brand New. 100 pages. 8.66x5.91x0.23 inches. In Stock. N° de réf. du vendeur 3659899488
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Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -In order to deal with the active power utilization of high-performance digital designs, dynamic leakage control techniques are required to contribute considerable leakage power savings. As technology scales, sub threshold leakage currents grow exponentially and become an increasingly large component of total power dissipation. The main objective of this project is to reduce the sub-threshold leakage in a CMOS device by making use of sleep transistors and PMOS logic. A low resistance path is generated by using sleep transistors as keepers to drop down the sub-threshold leakage. This is achieved further by using PMOS logic between the pull-up network (PUN) and pull down network (PDN). A fast and efficient leakage reduction technique is put forward which mitigates the power dissipation in addition to the reduction of leakage current. The main objective of the work is to analyze power and delay at 130nm, 90nm, and 45nm technologies for a CMOS half and full adder as well as subtractor circuits using microwind tool.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 100 pp. Englisch. N° de réf. du vendeur 9783659899485
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Vendeur : preigu, Osnabrück, Allemagne
Taschenbuch. Etat : Neu. Comparative Study on Reduction of Sub-Threshold Leakage Current | Kalagadda Bikshalu (u. a.) | Taschenbuch | 100 S. | Englisch | 2016 | LAP LAMBERT Academic Publishing | EAN 9783659899485 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. N° de réf. du vendeur 103628651
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