Articles liés à Effect of Underlap On Device Performance of GaN Based...
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- ÉditeurLAP LAMBERT Academic Publishing
- Date d'édition2016
- ISBN 10 3659920134
- ISBN 13 9783659920134
- ReliureBroché
- Nombre de pages68
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Effect of Underlap On Device Performance of GaN Based DG-MOSFET
Edité par
LAP LAMBERT Academic Publishing Jul 2016
(2016)
ISBN 10 : 3659920134
ISBN 13 : 9783659920134
Neuf
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Description du livre Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -GaN based double gate (DG) metal oxide semiconductor field effect transistors (MOSFETs) with a gate length of 10 nm have been designed for the next generation logic applications. The sub-threshold slope (SS) and drain induced barrier lowering (DIBL) are 66.5 mV/decade and 30 mV/V, respectively. The length of gate underlap is varied from 1 to 4 nm. The underlap architectures exhibit better performance due to reduced capacitive coupling between the contacts (S-G and G-D) which minimize the short channel effects. To improve the figure of merits of the proposed device, source to gate (S-G) and gate to drain (G-D) distances are varied which is mentioned as underlap. The lengths are maintained equal for both sides of the gate.The length of gate underlap is varied from 1 to 4 nm. The underlap architectures exhibit better performance due to reduced capacitive coupling between the contacts (S-G and G-D) which minimize the short channel effects. Therefore, the proposed GaN based DG MOSFETs shows excellent promise as one of the candidates to substitute currently used MOSFETs for future high speed applications. 68 pp. Englisch. N° de réf. du vendeur 9783659920134
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Effect of Underlap On Device Performance of GaN Based DG-MOSFET
Edité par
LAP LAMBERT Academic Publishing
(2016)
ISBN 10 : 3659920134
ISBN 13 : 9783659920134
Neuf
Taschenbuch
Quantité disponible : 1
Vendeur :
Evaluation vendeur
Description du livre Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - GaN based double gate (DG) metal oxide semiconductor field effect transistors (MOSFETs) with a gate length of 10 nm have been designed for the next generation logic applications. The sub-threshold slope (SS) and drain induced barrier lowering (DIBL) are 66.5 mV/decade and 30 mV/V, respectively. The length of gate underlap is varied from 1 to 4 nm. The underlap architectures exhibit better performance due to reduced capacitive coupling between the contacts (S-G and G-D) which minimize the short channel effects. To improve the figure of merits of the proposed device, source to gate (S-G) and gate to drain (G-D) distances are varied which is mentioned as underlap. The lengths are maintained equal for both sides of the gate.The length of gate underlap is varied from 1 to 4 nm. The underlap architectures exhibit better performance due to reduced capacitive coupling between the contacts (S-G and G-D) which minimize the short channel effects. Therefore, the proposed GaN based DG MOSFETs shows excellent promise as one of the candidates to substitute currently used MOSFETs for future high speed applications. N° de réf. du vendeur 9783659920134
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Autre devise
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Effect of Underlap On Device Performance of GaN Based DG-MOSFET
Edité par
LAP LAMBERT Academic Publishing
(2016)
ISBN 10 : 3659920134
ISBN 13 : 9783659920134
Neuf
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Description du livre Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Hasan Md. RokibI am Md. Rokib Hasan. My home town is Mymensingh, Bangladesh. I have completed my B.Sc. in Electrical and Electronics Engineering from American International University- Bangladesh (AIUB).I was nominated as a General S. N° de réf. du vendeur 158430660
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Effect of Underlap On Device Performance of GaN Based DG-MOSFET
Edité par
LAP LAMBERT Academic Publishing
(2016)
ISBN 10 : 3659920134
ISBN 13 : 9783659920134
Neuf
Paperback
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Description du livre Paperback. Etat : Brand New. 68 pages. 8.66x5.91x0.16 inches. In Stock. N° de réf. du vendeur __3659920134
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