Articles liés à Gallium Nitride Based Metal-Insulator-Semiconductor...

Gallium Nitride Based Metal-Insulator-Semiconductor (MIS) Structures - Couverture souple

Rajagopal Reddy, Varra; Lakshmi, B. Prasanna

 
9783659927140: Gallium Nitride Based Metal-Insulator-Semiconductor (MIS) Structures
Couverture souple
ISBN 10 : 3659927147 ISBN 13 : 9783659927140
Editeur : LAP LAMBERT Academic Publishing, 2016

Synopsis

Gallium nitride (GaN) metal-insulator-semiconductor (MIS) are very attractive because of their advantages such as a small gate leakage current, a large gate forward voltage, and surface passivation effect suppressing the drain current collapse. However, conventional Schottky barrier transistors suffer from the high gate leakage current and in particular the leakage current in the forward direction can cause fast device degradation. Reduction of the gate leakage current can be realized by employing an insulated gate metal-oxide-semiconductor technique. The interest in the experimental studies of metal-semiconductor (MS), metal-insulator-semiconductor (MIS) Schottky diodes rooted in their importance of the insulating layer between metal and semiconductor. The existence of such interfacial layer can have strong influence on the device characteristics such as the barrier height, ideality factor, and as well the interface state density. Due to the technological importance of the metal-insulator-semiconductor (MIS), a full understanding of its electrical properties is of great interest.

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

Présentation de l'éditeur

Gallium nitride (GaN) metal-insulator-semiconductor (MIS) are very attractive because of their advantages such as a small gate leakage current, a large gate forward voltage, and surface passivation effect suppressing the drain current collapse. However, conventional Schottky barrier transistors suffer from the high gate leakage current and in particular the leakage current in the forward direction can cause fast device degradation. Reduction of the gate leakage current can be realized by employing an insulated gate metal-oxide-semiconductor technique. The interest in the experimental studies of metal-semiconductor (MS), metal-insulator-semiconductor (MIS) Schottky diodes rooted in their importance of the insulating layer between metal and semiconductor. The existence of such interfacial layer can have strong influence on the device characteristics such as the barrier height, ideality factor, and as well the interface state density. Due to the technological importance of the metal-insulator-semiconductor (MIS), a full understanding of its electrical properties is of great interest.

Biographie de l'auteur

Prof. Reddy has published more than 175 articles in referred journals, and has been author or co-author of over 115 conference papers. Prof. Reddy has successfully guided 16 PhDs in the field of Advanced Electronic Materials (GaN). He is holder of one Korean patent. His current research interests are (i) Ohmic and Schottky Contacts to wide-bandgap.

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
LAP LAMBERT Academic Publishing
Date d'édition
2016
Langue
anglais
ISBN 10 
3659927147
ISBN 13 
9783659927140
Reliure
Broché
Nombre de pages
148
Coordonnées du fabricant
non disponible
Personne responsable
KreGa Onlinehandel GmbH
4950000000000
info@krega-onlinehandel.de

Birkenweg 31
Brakel
33034
Allemagne