Transmission Electron Microscopy of Semiconductor Nanostructures: An Analysis of Composition and Strain State - Couverture souple
Synopsis
This book provides tools well suited for the quantitative investigation of semiconductor electron microscopy. These tools allow for the accurate determination of the composition of ternary semiconductor nanostructures with a spatial resolution at near atomic scales. The book focuses on new methods including strain state analysis as well as evaluation of the composition via the lattice fringe analysis (CELFA) technique. The basics of these procedures as well as their advantages, drawbacks and sources of error are all discussed. The techniques are applied to quantum wells and dots in order to give insight into kinetic growth effects such as segregation and migration. In the first part of the book the fundamentals of transmission electron microscopy are provided. These are needed for an understanding of the digital image analysis techniques described in the second part of the book. There the reader will find information on different methods of composition determination. The third part of the book focuses on applications such as composition determination in InGaAs Stranski--Krastanov quantum dots. Finally it is shown how an improvement in the precision of the composition evaluation can be obtained by combining CELFA with electron holography. This is demonstrated for an AlAs/GaAs superlattice.
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Transmission Electron Microscopy of Semiconductor Nanostructures: An Analysis of Composition and Strain State (Springer Tracts in Modern Physics)
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Transmission Electron Microscopy of Semiconductor Nanostructures
Edité par
Springer Berlin Heidelberg Nov 2013, 2013
ISBN 10 : 3662146185
ISBN 13 : 9783662146187
Neuf
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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book provides tools well suited for thequantitative investigation of semiconductor electron microscopy. These tools allow for the accurate determination of the composition of ternary semiconductornanostructures with a spatial resolution at near atomic scales. The bookfocuses on new methods including strain stateanalysis as well as evaluation of the compositionvia the lattice fringe analysis (CELFA) technique.The basics of these procedures as well as theiradvantages, drawbacks and sources of error are alldiscussed. The techniques are applied to quantumwells and dots in order to give insight intokinetic growth effects such as segregation andmigration. In the first part of the book the fundamentals oftransmission electron microscopy are provided.These are needed for an understanding of thedigital image analysis techniques described in thesecond part of the book. There the reader willfind information on different methods ofcomposition determination. The third part of thebook focuses on applications such as compositiondetermination in InGaAs Stranski--Krastanovquantum dots. Finally it is shown how animprovement in the precision of the compositionevaluation can be obtained by combining CELFA withelectron holography. This is demonstrated for anAlAs/GaAs superlattice. 256 pp. Englisch. N° de réf. du vendeur 9783662146187
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Transmission Electron Microscopy of Semiconductor Nanostructures: An Analysis of Composition and Strain State
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Paperback. Etat : Brand New. reprint edition. 253 pages. 9.26x6.11x0.70 inches. In Stock. N° de réf. du vendeur x-3662146185
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Transmission Electron Microscopy of Semiconductor Nanostructures
Edité par
Springer Berlin Heidelberg, 2013
ISBN 10 : 3662146185
ISBN 13 : 9783662146187
Neuf
Couverture souple
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Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Up-to-date overviewNo related/competitive literature on the marketCovers fundamentals and current topics of TEMHighly important technology for future production of nanostructuresThis book provides tools well suited for thequa. N° de réf. du vendeur 5222513
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Transmission Electron Microscopy of Semiconductor Nanostructures
Edité par
Springer Berlin Heidelberg, Springer Berlin Heidelberg Nov 2013, 2013
ISBN 10 : 3662146185
ISBN 13 : 9783662146187
Neuf
Taschenbuch
Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book provides tools well suited for thequantitative investigation of semiconductor electron microscopy. These tools allow for the accurate determination of the composition of ternary semiconductornanostructures with a spatial resolution at near atomic scales. The bookfocuses on new methods including strain stateanalysis as well as evaluation of the compositionvia the lattice fringe analysis (CELFA) technique.The basics of these procedures as well as theiradvantages, drawbacks and sources of error are alldiscussed. The techniques are applied to quantumwells and dots in order to give insight intokinetic growth effects such as segregation andmigration. In the first part of the book the fundamentals oftransmission electron microscopy are provided.These are needed for an understanding of thedigital image analysis techniques described in thesecond part of the book. There the reader willfind information on different methods ofcomposition determination. The third part of thebook focuses on applications such as compositiondetermination in InGaAs Stranski--Krastanovquantum dots. Finally it is shown how animprovement in the precision of the compositionevaluation can be obtained by combining CELFA withelectron holography. This is demonstrated for anAlAs/GaAs superlattice.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 256 pp. Englisch. N° de réf. du vendeur 9783662146187
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Transmission Electron Microscopy of Semiconductor Nanostructures : An Analysis of Composition and Strain State
Edité par
Springer Berlin Heidelberg, 2013
ISBN 10 : 3662146185
ISBN 13 : 9783662146187
Neuf
Taschenbuch
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
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Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides tools well suited for thequantitative investigation of semiconductor electron microscopy. These tools allow for the accurate determination of the composition of ternary semiconductornanostructures with a spatial resolution at near atomic scales. The bookfocuses on new methods including strain stateanalysis as well as evaluation of the compositionvia the lattice fringe analysis (CELFA) technique.The basics of these procedures as well as theiradvantages, drawbacks and sources of error are alldiscussed. The techniques are applied to quantumwells and dots in order to give insight intokinetic growth effects such as segregation andmigration. In the first part of the book the fundamentals oftransmission electron microscopy are provided.These are needed for an understanding of thedigital image analysis techniques described in thesecond part of the book. There the reader willfind information on different methods ofcomposition determination. The third part of thebook focuses on applications such as compositiondetermination in InGaAs Stranski--Krastanovquantum dots. Finally it is shown how animprovement in the precision of the compositionevaluation can be obtained by combining CELFA withelectron holography. This is demonstrated for anAlAs/GaAs superlattice. N° de réf. du vendeur 9783662146187
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Transmission Electron Microscopy of Semiconductor Nanostructures | An Analysis of Composition and Strain State
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Taschenbuch. Etat : Neu. Transmission Electron Microscopy of Semiconductor Nanostructures | An Analysis of Composition and Strain State | Andreas Rosenauer | Taschenbuch | xii | Englisch | 2013 | Springer-Verlag GmbH | EAN 9783662146187 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. N° de réf. du vendeur 105577580
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