Articles liés à The Source/Drain Engineering of Nanoscale Germanium-based...
Synopsis
This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10-7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
À propos de l?auteur
Dr. Li received his Bachelor degree of Science from Sichuan University in 2009, and Ph.D from Peking University in 2014
Prizes and awards:
2009-2014, Peking University
Leo KoGuan Scholarship, Chenming Hu Scholarship, Merit Student, Creative Talent Award.
2005-2009, Sichuan University
National Scholarship (twice), National Encouragement Scholarship, Xinyuan Scholarship (twice),
Comprehensive First-class Scholarship, Excellent Student Leader.
Publications:
1. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, and Ru Huang, "Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion-Implantation after Germanidation Technique," IEEE Electron Device Lett., vol. 33, no. 12, pp. 1687-1689, Dec. 2012.
2. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, and Ru Huang, "Morphology and Electrical Performance Improvement of NiGe/Ge Contact by P and Sb Co-implantation," IEEE Electron Device Lett., vol. 34, no. 5, pp. 596-598, May. 2013.
3. Zhiqiang Li, Xia An, Quanxin Yun, Meng Lin, Min Li, Ming Li, Xing Zhang, and Ru Huang, "Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n⁺/p Diode Achieved by Multiple Implantation and Multiple Annealing Technique," IEEE Electron Device Lett., vol. 34, no. 9, pp. 1097-1099, Sep. 2013.
4. Zhiqiang Li, Xia An, Quanxin Yun, Meng Lin, Xing Zhang and Ru Huang, "Tuning Schottky Barrier Height in Metal/n-Type Germanium by Inserting an Ultrathin Yttrium Oxide Film," ECS Solid State Lett., Vol. 1, no. 4, pp. Q33-Q34, 2012.
5. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, and Ru Huang, "Study on Schottky Barrier Modulation of NiGe/Ge by Ion-implantation after Germanidation Technique," The 11th ICSICT, Xi'an, 2012.
Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.
- ÉditeurSpringer-Verlag Berlin and Heidelberg GmbH & Co. K
- Date d'édition2016
- ISBN 10 366249681X
- ISBN 13 9783662496817
- ReliureRelié
- Langueanglais
- Numéro d'édition1
- Nombre de pages59
- Coordonnées du fabricantnon disponible
Acheter neuf
Afficher cet article
EUR 48,37
EUR 9,70 expédition depuis Allemagne vers France
Destinations, frais et délais
Résultats de recherche pour The Source/Drain Engineering of Nanoscale Germanium-based...
Image d'archives
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
Edité par
Springer Berlin Heidelberg, 2016
ISBN 10 : 366249681X
ISBN 13 : 9783662496817
Ancien ou d'occasion
Couverture rigide
Vendeur : Buchpark, Trebbin, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Etat : Sehr gut. Zustand: Sehr gut | Seiten: 80 | Sprache: Englisch | Produktart: Sonstiges. N° de réf. du vendeur 26476376/2
Quantité disponible : 1 disponible(s)
Image d'archives
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices (Springer Theses) [Hardcover] Li, Zhiqiang
Edité par
Springer, 2016
ISBN 10 : 366249681X
ISBN 13 : 9783662496817
Ancien ou d'occasion
Couverture rigide
Edition originale
Vendeur : SpringBooks, Berlin, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Hardcover. Etat : As New. 1. Auflage. Unread, like new. Immediately dispatched from Germany. N° de réf. du vendeur CEA-2406C-KUECHSTAPEL-02-0500k
Quantité disponible : 1 disponible(s)
Image d'archives
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices (Springer Theses)
Edité par
Springer, 2016
ISBN 10 : 366249681X
ISBN 13 : 9783662496817
Ancien ou d'occasion
Couverture rigide
Vendeur : BMV Bloor, Toronto, ON, Canada
Évaluation du vendeur 5 sur 5 étoiles
Etat : Very Good. Used - Very Good. N° de réf. du vendeur 45-a- 00007
Quantité disponible : 2 disponible(s)
Image fournie par le vendeur
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
Edité par
Springer Berlin Heidelberg, 2016
ISBN 10 : 366249681X
ISBN 13 : 9783662496817
Neuf
Couverture rigide
Vendeur : moluna, Greven, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Etat : New. N° de réf. du vendeur 117108279
Quantité disponible : Plus de 20 disponibles
Image fournie par le vendeur
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
Edité par
Springer Berlin Heidelberg, 2016
ISBN 10 : 366249681X
ISBN 13 : 9783662496817
Neuf
Couverture rigide
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Buch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600 and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10-7 -cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node. N° de réf. du vendeur 9783662496817
Quantité disponible : 1 disponible(s)
Image fournie par le vendeur
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
Edité par
Springer Berlin Heidelberg Jun 2016, 2016
ISBN 10 : 366249681X
ISBN 13 : 9783662496817
Neuf
Couverture rigide
Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Buch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600 and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10-7 -cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node. 80 pp. Englisch. N° de réf. du vendeur 9783662496817
Quantité disponible : 2 disponible(s)
Image fournie par le vendeur
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
Edité par
Springer Berlin Heidelberg, Springer Berlin Heidelberg Jun 2016, 2016
ISBN 10 : 366249681X
ISBN 13 : 9783662496817
Neuf
Couverture rigide
Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Buch. Etat : Neu. Neuware -This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600¿ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10¿7¿¿cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 80 pp. Englisch. N° de réf. du vendeur 9783662496817
Quantité disponible : 2 disponible(s)