Articles liés à Advanced Physical Models for Silicon Device Simulation
Synopsis
Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards these goals the quality of the physical models is decisive. The introductory chapter of this book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work an extensive collection of widely used models is discussed in terms of physical accuracy and application results. This review shows that the quality and efficiency of the phys- ical models, which have been developed for the purpose of numerical simulation over the last three decades, is sufficient for many applications. Nevertheless, the basic understanding of the microscopic processes, as well as the uniqueness and accuracy of the models are still unsatisfactory. Hence, the following chapters of the book deal with the derivation of physics-based models from a microscopic level, also using new approaches of "taylored quantum-mechanics". Each model is compared with experimental data and applied to a number of simulation exam- ples. The problems when starting from "first principles" and making the models suitable for a device simulator will also be demonstrated. We will show that demands for rapid computation and numerical robustness require a compromise between physical soundness and analytical simplicity, and that the attainable accuracy is limited by the complexity of the problems.
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
Acheter neuf
Afficher cet article
EUR 136,16
EUR 9,70 expédition depuis Allemagne vers France
Destinations, frais et délaisAutres éditions populaires du même titre
Résultats de recherche pour Advanced Physical Models for Silicon Device Simulation
Image fournie par le vendeur
Advanced Physical Models for Silicon Device Simulation
impression à la demandeVendeur : moluna, Greven, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Excellent overview about the most widely used modelsDiscussion of accuracy and application resultsComparison of theory and experimental dataFrom the reviews: . this is a well produced book, written in a easy to read style, and will also be. N° de réf. du vendeur 5250408
Quantité disponible : Plus de 20 disponibles
Image d'archives
Advanced Physical Models for Silicon Device Simulation (Computational Microelectronics)
Vendeur : Ria Christie Collections, Uxbridge, Royaume-Uni
Évaluation du vendeur 5 sur 5 étoiles
Etat : New. In. N° de réf. du vendeur ria9783709173343_new
Quantité disponible : Plus de 20 disponibles
Image fournie par le vendeur
Advanced Physical Models for Silicon Device Simulation
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards these goals the quality of the physical models is decisive. The introductory chapter of this book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work an extensive collection of widely used models is discussed in terms of physical accuracy and application results. This review shows that the quality and efficiency of the phys ical models, which have been developed for the purpose of numerical simulation over the last three decades, is sufficient for many applications. Nevertheless, the basic understanding of the microscopic processes, as well as the uniqueness and accuracy of the models are still unsatisfactory. Hence, the following chapters of the book deal with the derivation of physics-based models from a microscopic level, also using new approaches of 'taylored quantum-mechanics'. Each model is compared with experimental data and applied to a number of simulation exam ples. The problems when starting from 'first principles' and making the models suitable for a device simulator will also be demonstrated. We will show that demands for rapid computation and numerical robustness require a compromise between physical soundness and analytical simplicity, and that the attainable accuracy is limited by the complexity of the problems. N° de réf. du vendeur 9783709173343
Quantité disponible : 1 disponible(s)
Image fournie par le vendeur
Advanced Physical Models for Silicon Device Simulation
Edité par
Springer Vienna Okt 2012, 2012
ISBN 10 : 3709173345
ISBN 13 : 9783709173343
Neuf
Taschenbuch
Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -From the reviews: '. this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [.], and a useful source of reference for experienced users .' Microelectronics Journal 376 pp. Englisch. N° de réf. du vendeur 9783709173343
Quantité disponible : 2 disponible(s)
Image fournie par le vendeur
Advanced Physical Models for Silicon Device Simulation
Edité par
Springer Vienna, Springer Vienna Okt 2012, 2012
ISBN 10 : 3709173345
ISBN 13 : 9783709173343
Neuf
Taschenbuch
Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. Neuware -Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards these goals the quality of the physical models is decisive. The introductory chapter of this book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work an extensive collection of widely used models is discussed in terms of physical accuracy and application results. This review shows that the quality and efficiency of the phys ical models, which have been developed for the purpose of numerical simulation over the last three decades, is sufficient for many applications. Nevertheless, the basic understanding of the microscopic processes, as well as the uniqueness and accuracy of the models are still unsatisfactory. Hence, the following chapters of the book deal with the derivation of physics-based models from a microscopic level, also using new approaches of 'taylored quantum-mechanics'. Each model is compared with experimental data and applied to a number of simulation exam ples. The problems when starting from 'first principles' and making the models suitable for a device simulator will also be demonstrated. We will show that demands for rapid computation and numerical robustness require a compromise between physical soundness and analytical simplicity, and that the attainable accuracy is limited by the complexity of the problems.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 376 pp. Englisch. N° de réf. du vendeur 9783709173343
Quantité disponible : 2 disponible(s)
Image d'archives
Advanced Physical Models for Silicon Device Simulation
Vendeur : Books Puddle, New York, NY, Etats-Unis
Évaluation du vendeur 4 sur 5 étoiles
Etat : New. pp. 376. N° de réf. du vendeur 2648028720
Quantité disponible : 4 disponible(s)
Image d'archives
Advanced Physical Models for Silicon Device Simulation
impression à la demandeVendeur : Majestic Books, Hounslow, Royaume-Uni
Évaluation du vendeur 5 sur 5 étoiles
Etat : New. Print on Demand pp. 376 67:B&W 6.69 x 9.61 in or 244 x 170 mm (Pinched Crown) Perfect Bound on White w/Gloss Lam. N° de réf. du vendeur 44786671
Quantité disponible : 4 disponible(s)
Image d'archives
Advanced Physical Models for Silicon Device Simulation
impression à la demandeVendeur : Biblios, Frankfurt am main, HESSE, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Etat : New. PRINT ON DEMAND pp. 376. N° de réf. du vendeur 1848028730
Quantité disponible : 4 disponible(s)
Image d'archives
Advanced Physical Models for Silicon Device Simulation (Computational Microelectronics)
Vendeur : Lucky's Textbooks, Dallas, TX, Etats-Unis
Évaluation du vendeur 5 sur 5 étoiles
Etat : New. N° de réf. du vendeur ABLIING23Mar3113020324210
Quantité disponible : Plus de 20 disponibles
Image d'archives
Advanced Physical Models for Silicon Device Simulation (Computational Microelectronics)
Vendeur : Best Price, Torrance, CA, Etats-Unis
Évaluation du vendeur 5 sur 5 étoiles
Etat : New. SUPER FAST SHIPPING. N° de réf. du vendeur 9783709173343
Quantité disponible : 1 disponible(s)