Articles liés à Nitrogen Containing III-V Semiconductor Surfaces and...

Nitrogen Containing III-V Semiconductor Surfaces and Nanostructures: Studied by Scanning Tunneling Microscopy and Spectroscopy - Couverture souple

Ivanova, Lena

 
9783838111834: Nitrogen Containing III-V Semiconductor Surfaces and Nanostructures: Studied by Scanning Tunneling Microscopy and Spectroscopy
Couverture souple
ISBN 10 : 3838111834 ISBN 13 : 9783838111834
Editeur : Suedwestdeutscher Verlag fuer Hochschulschriften, 2010

Synopsis

Different nitrogen containing III-V semiconductor surfaces and nanostructures are studied using scanning tunneling microscopy and spectroscopy. In diluted GaAsN layers single nitrogen atoms can be identified. The measured density of states shows that nitrogen impurities lead to a splitting of the GaAs conduction band. The incorporation of nitrogen with a nominal concentration of 9% into InAs/GaAs QDs leads to a strong dissolution and the formation of extended spherical nitrogen-free InGaAs QDs with a low indium content. Furthermore, for the GaN(1-100) cleavage surface of epitaxially grown GaN substrates it is found that both the nitrogen and gallium derived intrinsic dangling bond surface states are outside of the fundamental bulk band gap. The observed Fermi level pinning at 1.0 eV below the conduction band edge is attributed to the high step density, but not to intrinsic surface states. In GaN wafers dislocations are found to form localized bunches of entangled nonparallel dislocation lines. The charge and the Burgers vector of these dislocations are identified. Finally, an epitaxially grown silicon doping modulation structure is imaged.

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

Présentation de l'éditeur

Different nitrogen containing III-V semiconductor surfaces and nanostructures are studied using scanning tunneling microscopy and spectroscopy. In diluted GaAsN layers single nitrogen atoms can be identified. The measured density of states shows that nitrogen impurities lead to a splitting of the GaAs conduction band. The incorporation of nitrogen with a nominal concentration of 9% into InAs/GaAs QDs leads to a strong dissolution and the formation of extended spherical nitrogen-free InGaAs QDs with a low indium content. Furthermore, for the GaN(1-100) cleavage surface of epitaxially grown GaN substrates it is found that both the nitrogen and gallium derived intrinsic dangling bond surface states are outside of the fundamental bulk band gap. The observed Fermi level pinning at 1.0 eV below the conduction band edge is attributed to the high step density, but not to intrinsic surface states. In GaN wafers dislocations are found to form localized bunches of entangled nonparallel dislocation lines. The charge and the Burgers vector of these dislocations are identified. Finally, an epitaxially grown silicon doping modulation structure is imaged.

Biographie de l'auteur

Dr. Lena Ivanova, Institut für Festkörperphysik, Technische Universität Berlin

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
Suedwestdeutscher Verlag fuer Hochschulschriften
Date d'édition
2010
Langue
anglais
ISBN 10 
3838111834
ISBN 13 
9783838111834
Reliure
Broché
Nombre de pages
144
Coordonnées du fabricant
non disponible
Personne responsable
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