This work is motivated by the progress and development in the fields of microelectronics and the resulting ongoing miniaturization of components. The miniaturization can cause new kinds of stress related problems which might influence negatively the reliability and durability of the device. Stresses and changes of the microstructure also influence optical and electronic properties of semiconductors like zinc oxide (ZnO). To understand the behavior and properties of materials on the nano- and microscopic scale, it is important to measure stresses with a high as possible lateral resolution. Raman microscopy was the method of choice as it owns a high spatial resolution, a high data acquisition rate as well as high strain sensitivity. Experiments were performed in one-, two- and three-dimensions focusing on different aspects of stresses and changes of the microstructure. The findings of the work can be divided into two main parts. One part focuses strongly on the method of Raman microscopy itself. The second part concentrates on the measurements of stresses and properties of different materials.
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This work is motivated by the progress and development in the fields of microelectronics and the resulting ongoing miniaturization of components. The miniaturization can cause new kinds of stress related problems which might influence negatively the reliability and durability of the device. Stresses and changes of the microstructure also influence optical and electronic properties of semiconductors like zinc oxide (ZnO). To understand the behavior and properties of materials on the nano- and microscopic scale, it is important to measure stresses with a high as possible lateral resolution. Raman microscopy was the method of choice as it owns a high spatial resolution, a high data acquisition rate as well as high strain sensitivity. Experiments were performed in one-, two- and three-dimensions focusing on different aspects of stresses and changes of the microstructure. The findings of the work can be divided into two main parts. One part focuses strongly on the method of Raman microscopy itself. The second part concentrates on the measurements of stresses and properties of different materials.
The author was born in 1978 and started 1999 studying material science at the Swiss Federal Institute of Technology Zürich (ETH). In 2005 he finished his studies and joined the laboratory for nanometallurgy as a PhD-student. In 2009 the author received the doctoral degree for his work on mechanical stresses analyzed by Raman microscopy.
Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.
Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This work is motivated by the progress and development in the fields of microelectronics and the resulting ongoing miniaturization of components. The miniaturization can cause new kinds of stress related problems which might influence negatively the reliability and durability of the device. Stresses and changes of the microstructure also influence optical and electronic properties of semiconductors like zinc oxide (ZnO). To understand the behavior and properties of materials on the nano- and microscopic scale, it is important to measure stresses with a high as possible lateral resolution. Raman microscopy was the method of choice as it owns a high spatial resolution, a high data acquisition rate as well as high strain sensitivity. Experiments were performed in one-, two- and three-dimensions focusing on different aspects of stresses and changes of the microstructure. The findings of the work can be divided into two main parts. One part focuses strongly on the method of Raman microscopy itself. The second part concentrates on the measurements of stresses and properties of different materials. 180 pp. Englisch. N° de réf. du vendeur 9783838116143
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Vendeur : moluna, Greven, Allemagne
Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Wermelinger ThomasThe author was born in 1978 and started 1999 studying material science at the Swiss Federal Institute of Technology Zuerich (ETH). In 2005 he finished his studies and joined the laboratory for nanometallurgy as a PhD. N° de réf. du vendeur 5405977
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Vendeur : preigu, Osnabrück, Allemagne
Taschenbuch. Etat : Neu. Analysis of Mechanical Stress and Microstructure by Raman Microscopy | A Multi-Dimensional Investigation at Small Length-Scales using Confocal Raman Microscopy | Thomas Wermelinger | Taschenbuch | 180 S. | Englisch | 2015 | Südwestdeutscher Verlag für Hochschulschriften | EAN 9783838116143 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. N° de réf. du vendeur 101193593
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Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -This work is motivated by the progress and development in the fields of microelectronics and the resulting ongoing miniaturization of components. The miniaturization can cause new kinds of stress related problems which might influence negatively the reliability and durability of the device. Stresses and changes of the microstructure also influence optical and electronic properties of semiconductors like zinc oxide (ZnO). To understand the behavior and properties of materials on the nano- and microscopic scale, it is important to measure stresses with a high as possible lateral resolution. Raman microscopy was the method of choice as it owns a high spatial resolution, a high data acquisition rate as well as high strain sensitivity. Experiments were performed in one-, two- and three-dimensions focusing on different aspects of stresses and changes of the microstructure. The findings of the work can be divided into two main parts. One part focuses strongly on the method of Raman microscopy itself. The second part concentrates on the measurements of stresses and properties of different materials.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 180 pp. Englisch. N° de réf. du vendeur 9783838116143
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Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This work is motivated by the progress and development in the fields of microelectronics and the resulting ongoing miniaturization of components. The miniaturization can cause new kinds of stress related problems which might influence negatively the reliability and durability of the device. Stresses and changes of the microstructure also influence optical and electronic properties of semiconductors like zinc oxide (ZnO). To understand the behavior and properties of materials on the nano- and microscopic scale, it is important to measure stresses with a high as possible lateral resolution. Raman microscopy was the method of choice as it owns a high spatial resolution, a high data acquisition rate as well as high strain sensitivity. Experiments were performed in one-, two- and three-dimensions focusing on different aspects of stresses and changes of the microstructure. The findings of the work can be divided into two main parts. One part focuses strongly on the method of Raman microscopy itself. The second part concentrates on the measurements of stresses and properties of different materials. N° de réf. du vendeur 9783838116143
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