Decreasing the resistivity of back contact layer of CdTe solar cell - Couverture souple

Muzaffar, Tasleem; Munir, Rahim; Ahsan Khan, Muhammad

 
9783838304120: Decreasing the resistivity of back contact layer of CdTe solar cell
Couverture souple
ISBN 10 : 3838304128 ISBN 13 : 9783838304120
Editeur : LAP LAMBERT Academic Publishing, 2010

Synopsis

The initial part of the book discuses' the literature surveys which have been used for the guidance of research work and the parameters used to select the three dopants. The selection was carried out using two criterions. Firstly, their elemental resistivity was compared with those for whom the decrease in resistivity of ZnTe was reported. Secondly, their crystal structures were also compared in the same fashion. The next major portion of the book discuses' the experiment path followed and the results achieved. The experiment section report's about the sample preparation, which was carried out using a physical vapor deposition method followed by their heat treatment. Sputtering could not be used due to its limitation on the deposition thickness. The characterizations which followed served their purpose in determining the phases formed during doping, the size of grains, the resistivity achieved in relation to the hole concentration and hole mobility of each dopant and the surface morphology of the depositions. Lastly, the report concludes by discussing the results.

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

Présentation de l'éditeur

The initial part of the book discuses' the literature surveys which have been used for the guidance of research work and the parameters used to select the three dopants. The selection was carried out using two criterions. Firstly, their elemental resistivity was compared with those for whom the decrease in resistivity of ZnTe was reported. Secondly, their crystal structures were also compared in the same fashion. The next major portion of the book discuses' the experiment path followed and the results achieved. The experiment section report's about the sample preparation, which was carried out using a physical vapor deposition method followed by their heat treatment. Sputtering could not be used due to its limitation on the deposition thickness. The characterizations which followed served their purpose in determining the phases formed during doping, the size of grains, the resistivity achieved in relation to the hole concentration and hole mobility of each dopant and the surface morphology of the depositions. Lastly, the report concludes by discussing the results.

Biographie de l'auteur

Tasleem Ahmad Muzaffar Metallurgy and Materials Engineer House # 84 Block "E" Burewala Punjab, Pakistan email: Tasleem_passion@hotmail.com I did my bachelors in Metallurgy and Materials Engineering from Ghulam Ishaq Khan Institute of Engineering Science and Technology. My Cgpa is 3.33 and was ranked 3rd in class.

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
LAP LAMBERT Academic Publishing
Date d'édition
2010
Langue
anglais
ISBN 10 
3838304128
ISBN 13 
9783838304120
Reliure
Broché
Nombre de pages
92
Coordonnées du fabricant
non disponible
Personne responsable
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