Articles liés à Microelectromechanical Devices: Design, Fabrication,...

Microelectromechanical Devices: Design, Fabrication, and Characterisation of SiC MEMS - Couverture souple

Hassan, Musaab

 
9783838321752: Microelectromechanical Devices: Design, Fabrication, and Characterisation of SiC MEMS
Couverture souple
ISBN 10 : 3838321758 ISBN 13 : 9783838321752
Editeur : LAP LAMBERT Academic Publishing, 2009

Synopsis

Silicon carbide (SiC) is a promising material for micro-electromechanical systems (MEMS) due to its mechanical and electrical advantages over well-known silicon MEMS. This work is part of a project sponsored by EPSRC in co-operation with Newcastle University, Edinburgh University, and the Scottish Microelectronic Centre (UK) and CWRU (USA). The book highlights relevant previous work in SiC MEMS and presents a model for SiC resonators, Fabrication and characterisation of SiC resonators. ANSYS (FEA tool) was used as a modeling tool. The book also presents high temperature measurements using electrostatically actuated SiC device which was fabricated for this purpose. Results obtained from frequency measurements at high temperatures are used to calculate the Young’s modulus temperature coefficient for 3C-SiC. Final chapters of the book focuses on the design, fabrication, and testing of a electrothermal SiC actuator. Further analysis is subsequently carried out to model the electrothermal actuator. The book also shows experimentally the potential of using electrothermal and electrostatic SiC devices for signals multiplication (RF MEMS).

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

Présentation de l'éditeur

Silicon carbide (SiC) is a promising material for micro-electromechanical systems (MEMS) due to its mechanical and electrical advantages over well-known silicon MEMS. This work is part of a project sponsored by EPSRC in co-operation with Newcastle University, Edinburgh University, and the Scottish Microelectronic Centre (UK) and CWRU (USA). The book highlights relevant previous work in SiC MEMS and presents a model for SiC resonators, Fabrication and characterisation of SiC resonators. ANSYS (FEA tool) was used as a modeling tool. The book also presents high temperature measurements using electrostatically actuated SiC device which was fabricated for this purpose. Results obtained from frequency measurements at high temperatures are used to calculate the Young’s modulus temperature coefficient for 3C-SiC. Final chapters of the book focuses on the design, fabrication, and testing of a electrothermal SiC actuator. Further analysis is subsequently carried out to model the electrothermal actuator. The book also shows experimentally the potential of using electrothermal and electrostatic SiC devices for signals multiplication (RF MEMS).

Biographie de l'auteur

Musaab Hassan received his BEng in Mechatronics Engineering from theInternational Islamic University(Malaysia) in 1999, and his MSc and PhD in Electrical andElectronic Engineeringfrom University of Newcastle Upon Tyne (United Kingdom) in 2001and 2006, respectively. He is assistant professor at theUniversity of Medical Sciences and Technology since 2006.

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
LAP LAMBERT Academic Publishing
Date d'édition
2009
Langue
anglais
ISBN 10 
3838321758
ISBN 13 
9783838321752
Reliure
Broché
Nombre de pages
164
Coordonnées du fabricant
non disponible
Personne responsable
KreGa Onlinehandel GmbH
4950000000000
info@krega-onlinehandel.de

Birkenweg 31
Brakel
33034
Allemagne