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Thin Films of Multiferroic BiCoO3: by Atomic Layer Deposition - Couverture souple

Gandrud, Knut Bjarne

 
9783838326511: Thin Films of Multiferroic BiCoO3: by Atomic Layer Deposition
Couverture souple
ISBN 10 : 3838326512 ISBN 13 : 9783838326511
Editeur : LAP Lambert Academic Publishing, 2010

Synopsis

The goal of this work was to deposit thin films of bismuth cobalt oxide, which is a rather unexplored yet promising multiferroic material, by Atomic Layer Deposition(ALD). However, in order to achieve this goal, first a suitable precursor combination for deposition of bismuth oxide by ALD had to be found. This work presents the first reported thin film deposition of ?-Bi2O3 by ALD. In addition, thin films of Co3O4 and CoO are for the first time reported deposited by ALD from the respective novel precursor combinations Co(thd)3/O3 and Co(thd)2/H2O (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate). Finally, BiPh3 (Ph = phenyl), Bi(t-OBu)3 (t-OBu = tert-butoxide) and Bi(thd)3 were all investigated for potential use as bismuth precursors in the ALD process. Thin films of Co3O4 deposited from the novel precursor combination Co(thd)3/O3 was investigated and a comparison to the already well investigated precursor combination Co(thd)2/O3 is given. Deposition and investigation of thin films in the Bi-Co-O system are also presented. However, an etching process was observed between the Bi(thd)3 precursors and the Co3O4 surface. A possible mechanism is presented.

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

Présentation de l'éditeur

The goal of this work was to deposit thin films of bismuth cobalt oxide, which is a rather unexplored yet promising multiferroic material, by Atomic Layer Deposition(ALD). However, in order to achieve this goal, first a suitable precursor combination for deposition of bismuth oxide by ALD had to be found. This work presents the first reported thin film deposition of ?-Bi2O3 by ALD. In addition, thin films of Co3O4 and CoO are for the first time reported deposited by ALD from the respective novel precursor combinations Co(thd)3/O3 and Co(thd)2/H2O (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate). Finally, BiPh3 (Ph = phenyl), Bi(t-OBu)3 (t-OBu = tert-butoxide) and Bi(thd)3 were all investigated for potential use as bismuth precursors in the ALD process. Thin films of Co3O4 deposited from the novel precursor combination Co(thd)3/O3 was investigated and a comparison to the already well investigated precursor combination Co(thd)2/O3 is given. Deposition and investigation of thin films in the Bi-Co-O system are also presented. However, an etching process was observed between the Bi(thd)3 precursors and the Co3O4 surface. A possible mechanism is presented.

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
LAP Lambert Academic Publishing
Date d'édition
2010
Langue
anglais
ISBN 10 
3838326512
ISBN 13 
9783838326511
Reliure
Broché
Nombre de pages
144
Coordonnées du fabricant
non disponible
Personne responsable
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