Hafnium Oxide And Hafnium Silicate For High-k Application: Characterization of Hafnium Based Oxide Thin Films Deposited by CVD - Couverture souple

Name: Hafnium Oxide And Hafnium Silicate For High-k Application: Characterization of Hafnium Based Oxide Thin Films Deposited by CVD
Author: Bhandari, Harish
ISBN: 9783838333885

Bhandari, Harish

9783838333885: Hafnium Oxide And Hafnium Silicate For High-k Application: Characterization of Hafnium Based Oxide Thin Films Deposited by CVD

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ISBN 10 : 3838333888 ISBN 13 : 9783838333885

Editeur : LAP Lambert Academic Publishing, 2010

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Novel materials with high-dielectric(k) constants are rapidly gaining attention for their application as gate insulator for future MOS transistors. This book provides the basic principles underlying chemical vapor deposition (CVD) of hafnium oxide and hafnium silicate thin films for high-k application. In addition to the deposition fundamentals, the discussions in the book provide valuable insights to various chemical and physical characterization techniques that can be applied to thin films in general. This easy-to-understand and well- illustrated text is designed for both beginners as well as advanced researchers with a good introduction to the subject of high-k thin films.

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�diteur: LAP Lambert Academic Publishing
Date d'�dition: 2010
Langue: anglais
ISBN 10: 3838333888
ISBN 13: 9783838333885
Reliure: Broch�
Nombre de pages: 232
Coordonn�es du fabricant: non disponible
Personne responsable: KreGa Onlinehandel GmbH
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Hafnium Oxide And Hafnium Silicate For High-k Application

Harish Bhandari

Edit� par LAP LAMBERT Academic Publishing Sep 2010, 2010

ISBN 10 : 3838333888 ISBN 13 : 9783838333885

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Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne

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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Novel materials with high-dielectric(k) constants are rapidly gaining attention for their application as gate insulator for future MOS transistors. This book provides the basic principles underlying chemical vapor deposition (CVD) of hafnium oxide and hafnium silicate thin films for high-k application. In addition to the deposition fundamentals, the discussions in the book provide valuable insights to various chemical and physical characterization techniques that can be applied to thin films in general. This easy-to-understand and well- illustrated text is designed for both beginners as well as advanced researchers with a good introduction to the subject of high-k thin films. 232 pp. Englisch. N� de r�f. du vendeur 9783838333885

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Hafnium Oxide And Hafnium Silicate For High-k Application : Characterization of Hafnium Based Oxide Thin Films Deposited by CVD & Plasma-CVD For High-k Application in Transistors

Harish Bhandari

Edit� par LAP LAMBERT Academic Publishing, 2010

ISBN 10 : 3838333888 ISBN 13 : 9783838333885

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Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne

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Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Novel materials with high-dielectric(k) constants are rapidly gaining attention for their application as gate insulator for future MOS transistors. This book provides the basic principles underlying chemical vapor deposition (CVD) of hafnium oxide and hafnium silicate thin films for high-k application. In addition to the deposition fundamentals, the discussions in the book provide valuable insights to various chemical and physical characterization techniques that can be applied to thin films in general. This easy-to-understand and well- illustrated text is designed for both beginners as well as advanced researchers with a good introduction to the subject of high-k thin films. N� de r�f. du vendeur 9783838333885

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Hafnium Oxide And Hafnium Silicate For High-k Application

Harish Bhandari

Edit� par LAP LAMBERT Academic Publishing, 2010

ISBN 10 : 3838333888 ISBN 13 : 9783838333885

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Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Bhandari HarishHarish Bhandari received the Bachelors in Chemical Engineering (2000) from Bangalore University, India. He earned his M.S. and Ph.D. (2006) in Chemical Engineering at the University of Alabama. He is currently a Res. N� de r�f. du vendeur 5413971

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Hafnium Oxide And Hafnium Silicate For High-k Application:.

Bhandari, Harish

Edit� par LAP Lambert Academic Publishing, 2010

ISBN 10 : 3838333888 ISBN 13 : 9783838333885

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Hafnium Oxide And Hafnium Silicate For High-k Application

Harish Bhandari

Edit� par LAP LAMBERT Academic Publishing Sep 2010, 2010

ISBN 10 : 3838333888 ISBN 13 : 9783838333885

Neuf Taschenbuch

impression � la demande

Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne

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Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -Novel materials with high-dielectric(k) constants are rapidly gaining attention for their application as gate insulator for future MOS transistors. This book provides the basic principles underlying chemical vapor deposition (CVD) of hafnium oxide and hafnium silicate thin films for high-k application. In addition to the deposition fundamentals, the discussions in the book provide valuable insights to various chemical and physical characterization techniques that can be applied to thin films in general. This easy-to-understand and well- illustrated text is designed for both beginners as well as advanced researchers with a good introduction to the subject of high-k thin films.VDM Verlag, Dudweiler Landstra�e 99, 66123 Saarbr�cken 232 pp. Englisch. N� de r�f. du vendeur 9783838333885

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