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Analysis and Design of a DRAM Cell for Low Leakage: Process Level Techniques for Leakage Reduction - Couverture souple

Singh, Rashmi; Kumar, Arun

 
9783838339436: Analysis and Design of a DRAM Cell for Low Leakage: Process Level Techniques for Leakage Reduction
Couverture souple
ISBN 10 : 3838339436 ISBN 13 : 9783838339436
Editeur : LAP Lambert Academic Publishing, 2010

Synopsis

In Dynamic Random Access Memory, every cell experiences leakage current which consumes part of the stored charge. As the DRAM cell size is shrinking, the leakage is increasing. To maintain the desired data retention time, the leakage current must be kept within the acceptable limit. So, leakage reduction in memories is a topic of great challenge and interest in researchers. This book presents the analysis and design of a DRAM cell for low leakage. For the analysis, trench capacitor DRAM cell has been considered. For the design of trench capacitor DRAM cell, 0.18 ?m submicron nMOSFET as access transistor and the conventional trench capacitor as storage device have been considered. Various DRAM cell structures, leakage mechanisms in a DRAM cell and process-level techniques for leakage reduction have been reviewed. Process simulation and device simulation of DRAM cell have been done using the ATHENA/ATLAS packages of SILVACO. This book will help the beginners as the book reviews the previous work done by many researchers and provides the trends in DRAM cell designs, theoretical knowledge of leakage mechanisms in DRAM cell and process/device simulation of DRAM cell.

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

Présentation de l'éditeur

In Dynamic Random Access Memory, every cell experiences leakage current which consumes part of the stored charge. As the DRAM cell size is shrinking, the leakage is increasing. To maintain the desired data retention time, the leakage current must be kept within the acceptable limit. So, leakage reduction in memories is a topic of great challenge and interest in researchers. This book presents the analysis and design of a DRAM cell for low leakage. For the analysis, trench capacitor DRAM cell has been considered. For the design of trench capacitor DRAM cell, 0.18 ?m submicron nMOSFET as access transistor and the conventional trench capacitor as storage device have been considered. Various DRAM cell structures, leakage mechanisms in a DRAM cell and process-level techniques for leakage reduction have been reviewed. Process simulation and device simulation of DRAM cell have been done using the ATHENA/ATLAS packages of SILVACO. This book will help the beginners as the book reviews the previous work done by many researchers and provides the trends in DRAM cell designs, theoretical knowledge of leakage mechanisms in DRAM cell and process/device simulation of DRAM cell.

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
LAP Lambert Academic Publishing
Date d'édition
2010
Langue
anglais
ISBN 10 
3838339436
ISBN 13 
9783838339436
Reliure
Broché
Nombre de pages
56
Coordonnées du fabricant
non disponible
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