The book focuses on the electrical properties and photoinduced processes in polymer based field-effect transistors PFETs. The photoinduced drain current in the PFETs results from a variety of possible pathways, and is a consequence of a complex charge generation, recombination and transport processes. These processes are observed to be dependent on the gate voltage and demonstrate a coupling between the photoexcitation and transistor features. Considerable increase in drain current upon irradiation, followed by an extremely slow relaxation upon terminating the illumination is the striking feature in poly(3-hexylthiophene) based transistor operated under accumulation mode. In depletion mode, the photoresponse becomes strongly dependent on gate voltage. Low dark current in the background, accompanied by large photosensitivity in this mode is exploited to observe memory effect including write, read, store and erase operations. The unique combination of gate bias and light as input parameters for charge transport in polymer transistor and the spatial information of the gate voltage dependent photocarrier generation region are thoroughly investigated using spectroscopic analysis.
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
The book focuses on the electrical properties and photoinduced processes in polymer based field-effect transistors PFETs. The photoinduced drain current in the PFETs results from a variety of possible pathways, and is a consequence of a complex charge generation, recombination and transport processes. These processes are observed to be dependent on the gate voltage and demonstrate a coupling between the photoexcitation and transistor features. Considerable increase in drain current upon irradiation, followed by an extremely slow relaxation upon terminating the illumination is the striking feature in poly(3-hexylthiophene) based transistor operated under accumulation mode. In depletion mode, the photoresponse becomes strongly dependent on gate voltage. Low dark current in the background, accompanied by large photosensitivity in this mode is exploited to observe memory effect including write, read, store and erase operations. The unique combination of gate bias and light as input parameters for charge transport in polymer transistor and the spatial information of the gate voltage dependent photocarrier generation region are thoroughly investigated using spectroscopic analysis.
Soumya Dutta received his Master in Physics from The University of Burdwan and Ph.D in Materials Science/Electrical Engineering from JNCASR, Bangalore in India. Presently he is doing his postdoctoral research at the University of Texas at Austin as a Research Associate. He received several recognitions including Young Scientist Award by EMRS.
Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.
Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The book focuses on the electrical properties and photoinduced processes in polymer based field-effect transistors PFETs. The photoinduced drain current in the PFETs results from a variety of possible pathways, and is a consequence of a complex charge generation, recombination and transport processes. These processes are observed to be dependent on the gate voltage and demonstrate a coupling between the photoexcitation and transistor features. Considerable increase in drain current upon irradiation, followed by an extremely slow relaxation upon terminating the illumination is the striking feature in poly(3-hexylthiophene) based transistor operated under accumulation mode. In depletion mode, the photoresponse becomes strongly dependent on gate voltage. Low dark current in the background, accompanied by large photosensitivity in this mode is exploited to observe memory effect including write, read, store and erase operations. The unique combination of gate bias and light as input parameters for charge transport in polymer transistor and the spatial information of the gate voltage dependent photocarrier generation region are thoroughly investigated using spectroscopic analysis. 180 pp. Englisch. N° de réf. du vendeur 9783838367361
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Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The book focuses on the electrical properties and photoinduced processes in polymer based field-effect transistors PFETs. The photoinduced drain current in the PFETs results from a variety of possible pathways, and is a consequence of a complex charge generation, recombination and transport processes. These processes are observed to be dependent on the gate voltage and demonstrate a coupling between the photoexcitation and transistor features. Considerable increase in drain current upon irradiation, followed by an extremely slow relaxation upon terminating the illumination is the striking feature in poly(3-hexylthiophene) based transistor operated under accumulation mode. In depletion mode, the photoresponse becomes strongly dependent on gate voltage. Low dark current in the background, accompanied by large photosensitivity in this mode is exploited to observe memory effect including write, read, store and erase operations. The unique combination of gate bias and light as input parameters for charge transport in polymer transistor and the spatial information of the gate voltage dependent photocarrier generation region are thoroughly investigated using spectroscopic analysis. N° de réf. du vendeur 9783838367361
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Vendeur : moluna, Greven, Allemagne
Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Dutta SoumyaSoumya Dutta received his Master in Physics from The University of Burdwan and Ph.D in Materials Science/Electrical Engineering from JNCASR, Bangalore in India. Presently he is doing his postdoctoral research at the Unive. N° de réf. du vendeur 5417060
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Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -The book focuses on the electrical properties and photoinduced processes in polymer based field-effect transistors PFETs. The photoinduced drain current in the PFETs results from a variety of possible pathways, and is a consequence of a complex charge generation, recombination and transport processes. These processes are observed to be dependent on the gate voltage and demonstrate a coupling between the photoexcitation and transistor features. Considerable increase in drain current upon irradiation, followed by an extremely slow relaxation upon terminating the illumination is the striking feature in poly(3-hexylthiophene) based transistor operated under accumulation mode. In depletion mode, the photoresponse becomes strongly dependent on gate voltage. Low dark current in the background, accompanied by large photosensitivity in this mode is exploited to observe memory effect including write, read, store and erase operations. The unique combination of gate bias and light as input parameters for charge transport in polymer transistor and the spatial information of the gate voltage dependent photocarrier generation region are thoroughly investigated using spectroscopic analysis.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 180 pp. Englisch. N° de réf. du vendeur 9783838367361
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Vendeur : preigu, Osnabrück, Allemagne
Taschenbuch. Etat : Neu. Lights on Polymer Field-Effect Transistors | Photoinduced Charge Generation, Recombination and Transport | Soumya Dutta | Taschenbuch | 180 S. | Englisch | 2011 | LAP LAMBERT Academic Publishing | EAN 9783838367361 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. N° de réf. du vendeur 107067382
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