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Modeling and Simulation of Physical Properties in Semiconductors: Modeling and Simulation of Structural and Electronic Properties in Binary Semiconductors - Couverture souple

Al-Douri, Yarub

 
9783843368063: Modeling and Simulation of Physical Properties in Semiconductors: Modeling and Simulation of Structural and Electronic Properties in Binary Semiconductors
Couverture souple
ISBN 10 : 3843368066 ISBN 13 : 9783843368063
Editeur : LAP LAMBERT Academic Publishing, 2010

Synopsis

The empirical concepts as electronegativity, ionicity and bulk modulus are very important for studying the basic properties of solids. The difficulty in defining the ionicity and bulk modulus lies in transforming a qualitative or verbal concept into a quantitative, mathematical formula. My works concentrated on using empirical pseudopotential method (EPM) to calculate electronic properties (ionicity factor) ?i in terms of the difference between the first and second valence band at point X, Eg (V2-V1), and making various formulas as a function of transverse effective charge eT*, nearest-neighbor distance d, cohesive energy Ecoh, and refractive index n0. I had investigated for the structural properties (bulk modulus) B0 new models in terms of the cation part SC of the charge density, the transition pressure Pt and the lattice parameter. This study has three essential goals: 1. Define the ionicity factor and the bulk modulus by the electronic band structure and charge density, respectively. 2. Establish a new scale. 3. Study the validity of the new models under external effects. The reasonable results compared with experimental and theoretical ones are obtained.

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

Présentation de l'éditeur

The empirical concepts as electronegativity, ionicity and bulk modulus are very important for studying the basic properties of solids. The difficulty in defining the ionicity and bulk modulus lies in transforming a qualitative or verbal concept into a quantitative, mathematical formula. My works concentrated on using empirical pseudopotential method (EPM) to calculate electronic properties (ionicity factor) ?i in terms of the difference between the first and second valence band at point X, Eg (V2-V1), and making various formulas as a function of transverse effective charge eT*, nearest-neighbor distance d, cohesive energy Ecoh, and refractive index n0. I had investigated for the structural properties (bulk modulus) B0 new models in terms of the cation part SC of the charge density, the transition pressure Pt and the lattice parameter. This study has three essential goals: 1. Define the ionicity factor and the bulk modulus by the electronic band structure and charge density, respectively. 2. Establish a new scale. 3. Study the validity of the new models under external effects. The reasonable results compared with experimental and theoretical ones are obtained.

Biographie de l'auteur

Assoc. Prof. Dr. Yarub Al-Douri has Ph.D in Materials Science. He worked at NUS, Singapore; TU Chemnitz, Germany; CNRS, France and in other universities. Dr. Al-Douri edited and authored four books till now and a lot of international papers and conferences. He is now Editor-in-Chief of International Journal of Nanoelectronics and Materials.

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
LAP LAMBERT Academic Publishing
Date d'édition
2010
Langue
anglais
ISBN 10 
3843368066
ISBN 13 
9783843368063
Reliure
Broché
Nombre de pages
140
Coordonnées du fabricant
non disponible
Personne responsable
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