This thesis focuses on fabricating and studying (p-channel, n-channel and bilayer) field effect transistor devices under dark, steady state and transient illumination conditions. This thesis probes injection barrier at metal-semiconducting polymer interface that determine the overall charge injection property of the device. FET's consisting on n-channel acceptor with a coating of optically active donor polymers is studied. Presence of D-A interface in FET showing n-channel transport is used to study the process of charge separation and charge transport occurring in bulk of the acceptor upon photoexciting the donor polymer.
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
This thesis focuses on fabricating and studying (p-channel, n-channel and bilayer) field effect transistor devices under dark, steady state and transient illumination conditions. This thesis probes injection barrier at metal-semiconducting polymer interface that determine the overall charge injection property of the device. FET's consisting on n-channel acceptor with a coating of optically active donor polymers is studied. Presence of D-A interface in FET showing n-channel transport is used to study the process of charge separation and charge transport occurring in bulk of the acceptor upon photoexciting the donor polymer.
Manohar Rao completed his masters in physics from Sri Satya Sai University (INDIA) in 2004. Later i completed my PhD from JNCASR (INDIA) in chemistry and physics of materials unit in May 2010. Presently I'm a Research Fellow at Energy Research Institute at Nanyang Technological University, Singapore.
Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.
EUR 8,03 expédition depuis Royaume-Uni vers Etats-Unis
Destinations, frais et délaisEUR 23 expédition depuis Allemagne vers Etats-Unis
Destinations, frais et délaisVendeur : BoundlessBookstore, Wallingford, Royaume-Uni
Etat : As New. Like new, very good condition. N° de réf. du vendeur 9999-9996450401
Quantité disponible : 1 disponible(s)
Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This thesis focuses on fabricating and studying (p-channel, n-channel and bilayer) field effect transistor devices under dark, steady state and transient illumination conditions. This thesis probes injection barrier at metal-semiconducting polymer interface that determine the overall charge injection property of the device. FET's consisting on n-channel acceptor with a coating of optically active donor polymers is studied. Presence of D-A interface in FET showing n-channel transport is used to study the process of charge separation and charge transport occurring in bulk of the acceptor upon photoexciting the donor polymer. 172 pp. Englisch. N° de réf. du vendeur 9783843369404
Quantité disponible : 2 disponible(s)
Vendeur : moluna, Greven, Allemagne
Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Rao ManoharManohar Rao completed his masters in physics from Sri Satya Sai University (INDIA) in 2004. Later i completed my PhD from JNCASR (INDIA) in chemistry and physics of materials unit in May 2010. Presently I m a Research Fel. N° de réf. du vendeur 5466864
Quantité disponible : Plus de 20 disponibles
Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Taschenbuch. Etat : Neu. Neuware -This thesis focuses on fabricating and studying (p-channel, n-channel and bilayer) field effect transistor devices under dark, steady state and transient illumination conditions. This thesis probes injection barrier at metal-semiconducting polymer interface that determine the overall charge injection property of the device. FET''s consisting on n-channel acceptor with a coating of optically active donor polymers is studied. Presence of D-A interface in FET showing n-channel transport is used to study the process of charge separation and charge transport occurring in bulk of the acceptor upon photoexciting the donor polymer.Books on Demand GmbH, Überseering 33, 22297 Hamburg 172 pp. Englisch. N° de réf. du vendeur 9783843369404
Quantité disponible : 2 disponible(s)
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This thesis focuses on fabricating and studying (p-channel, n-channel and bilayer) field effect transistor devices under dark, steady state and transient illumination conditions. This thesis probes injection barrier at metal-semiconducting polymer interface that determine the overall charge injection property of the device. FET's consisting on n-channel acceptor with a coating of optically active donor polymers is studied. Presence of D-A interface in FET showing n-channel transport is used to study the process of charge separation and charge transport occurring in bulk of the acceptor upon photoexciting the donor polymer. N° de réf. du vendeur 9783843369404
Quantité disponible : 1 disponible(s)
Vendeur : Mispah books, Redhill, SURRE, Royaume-Uni
Paperback. Etat : Like New. Like New. book. N° de réf. du vendeur ERICA79038433694026
Quantité disponible : 1 disponible(s)